8 results about "Germanium selenide" patented technology

The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector and preparation method thereof, belong to the technical field of germanium selenide crystal material.The application discloses a kind of based on two-dimensional germanium selenide / molybdenum disulfide polarized photoelectric detector, adopt two-dimensional germanium selenide as anisotropic two-dimensional semiconductor layer, adopt molybdenum disulfide as two-dimensional semiconductor layer, molybdenum disulfide is main conductive channel, germanium selenide is as top layer photosensitive material, the built-in electric field of the PN junction formed in vertical direction, the separation of photo-generated carrier is enhanced, so as to improve photoelectric detection performance.Using the method of gas phase transmission, germanium selenide crystal is synthesized using germanium powder, selenium powder and crystalline iodine powder as anisotropic two-dimensional semiconductor layer two-dimensional germanium selenide, with the advantages of simple operation steps, low production cost, can be used for industrial production.

The application discloses a preparation method of germanium diselenide and belongs to the technical field of compound preparation. The preparation method of germanium diselenide provided by the application comprises the following steps: mixing germanium powder screened and selenium powder screened and ball milling, then heating and reacting in an inert gas environment, crushing after removing the surface attachments of the heating and reaction product, and heat-insulating and reacting in the inert gas environment, so that golden yellow crystalline germanium diselenide can be obtained. The obtained germanium diselenide is high in purity, free of segregation, and low in loss, namely, high in yield. Moreover, the preparation method provided by the application is simple in operation, does not need special equipment, and is beneficial to practical production and application.

The invention discloses a selenium-germanium-mercury-barium single crystal growth method which comprises the following steps: a crucible containing selenium-germanium-mercury-barium polycrystals is placed in a quartz tube, the quartz tube is vacuumized and then placed in a single crystal growth furnace, and the single crystal growth furnace comprises a high-temperature area, a gradient area and a low-temperature area which are sequentially and continuously arranged from top to bottom; adjusting the temperature in the single crystal growth furnace until the temperature of a high-temperature zone is 730-760 DEG C, the temperature of a low-temperature zone is 560-590 DEG C, and the temperature of a gradient zone is reduced from the temperature of the high-temperature zone to the temperature of the low-temperature zone according to the temperature gradient of 8-12 DEG C / cm; a seed-crystal-free spontaneous nucleation method is adopted to grow the crystal; and after crystal growth is finished, cooling to room temperature. The growth method of the selenium-germanium-mercury-barium single crystal well solves the problems that the non-stoichiometric ratio and the yield of selenium-germanium-mercury-barium polycrystal synthesis are low, invalid crystal nucleuses are easily formed in the spontaneous nucleation stage of selenium-germanium-mercury-barium, the crystal quality is unstable and the like.

The present invention relates to a two-dimensional vertical heterojunction photodetector and a preparation method thereof. The preparation method directly prepares a two-dimensional chalcogenide / germanium selenide vertical heterojunction through a two-step physical vapor deposition process. By controlling the temperature of the source and the growth substrate by partitioning, the nucleation density is adjusted, the film formation quality is improved, the introduction of impurities is avoided, and the interface quality problem is effectively solved. A large-sized, high-crystallinity and high-flatness heterojunction can be obtained. During the preparation process, the present invention can also use visualization equipment to observe the deposition growth process and timely adjust the process parameters to avoid premature deposition and oversaturated growth of the compound. The photodetector obtained by the growth exhibits characteristics such as good rectification effect and good photoelectric performance, has stable performance, and has high application value. It can be used in the field of optoelectronic devices or polarized infrared imaging equipment.

The present invention relates to a field effect transistor based on germanium selenide two-dimensional material and its application, which includes a substrate, a first isolation layer, a germanium selenide channel, a second isolation layer, a single gate structure, and a source / drain adjacent to the single gate structure, stacked in sequence from bottom to top. The advantages of the present invention are that the field effect transistor is small in volume and has a neat structure; and germanium selenide is used as the channel, which can achieve switching current and subthreshold swing that meet the HP application standard, thereby improving the performance of the field effect transistor.

A method of manufacturing a gamma-germanium selenide (γ-GeSe) layer may include coating a first surface of a base layer with a catalytic metal, providing alpha-germanium selenide (α-GeSe) at a first position in a processing space and providing the base layer at a second position in the process space, which is spaced apart from the first position in the processing space, heating the first position in the processing space to a first temperature, supplying gas from the first position to the second position in the processing space, and depositing γ-GeSe on the first surface of the base layer. The base layer may include a crystalline material having a crystal system that is hexagonal.

According to the preparation method, a two-dimensional chalcogenide / germanium selenide vertical heterojunction is directly prepared through a two-step physical vapor deposition process, the temperature of a source and a growth substrate is controlled in a partitioned mode, the nucleation density is adjusted, the film forming quality is improved, impurities are prevented from being introduced, and the photoelectric detector is prepared. According to the preparation method, the problem of interface quality is effectively solved, large-size, high-crystallinity and flatness heterojunction can be obtained, visual equipment can be adopted in the preparation process, and advanced deposition and supersaturated growth of a compound are avoided by observing the deposition and growth process and adjusting process parameters in time; the photoelectric detector obtained through growth shows the characteristics of good rectification effect, good photoelectric performance and the like, is stable in performance and high in application value, and can be used in the field of photoelectric devices or polarization infrared imaging equipment.

The invention discloses a reconfigurable color camouflage device based on a germanium-selenium material. The reconfigurable color camouflage device sequentially comprises a substrate, a reflecting layer, a dielectric layer, a functional layer and a protective layer from bottom to top, the functional layer is made of a germanium-selenium material, the chemical formula is GexSe100-x, x is larger than or equal to 40 and smaller than or equal to 75, y is larger than or equal to 1 and smaller than or equal to 2, and the thickness range is larger than or equal to 10 nm and smaller than or equal to 400 nm; reconfigurable color camouflage under visible light is realized through switching of an amorphous phase and a crystal phase of the germanium-selenium material. The germanium selenium has excellent thermal stability, an amorphous phase and a crystal phase of the germanium selenium have obvious optical property difference, and the two phases can keep the structure and performance stable for a long time. By designing a simple multi-layer film structure device, the material and thickness of each layer and the phase structure switching of the germanium-selenium material are controlled, and the rapid and reversible switching of the device in a specific color gamut can be realized.