35 results about "Silver(I) selenide" patented technology

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (Ge_xSe_(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

The invention relates to a preparation method for optimizing the thermoelectric performance of a silver selenide/nylon flexible composite film, and the method comprises the following steps: (1) takinga selenium nanowire as a template, enabling the selenium nanowire to react with silver nitrate in an ethylene glycol solvent at 40 DEG C, and carrying out separation, thereby obtaining a silver selenide nanostructure; (2) dispersing the silver selenide nanostructure in absolute ethyl alcohol, taking a nylon filter membrane as a substrate, and performing suction filtration and drying to obtain a nylon-silver selenide film; and (3) finally, carrying out hot pressing treatment on the nylon-silver selenide film obtained in the step (2) to obtain a target product. Compared with the prior art, themethod has the advantages that the high-performance flexible thermoelectric thin film can be prepared, and the thin film is used for manufacturing a high-output-performance thermoelectric device to supply power to a wearable electronic device.

The invention provides silver selenide/selenium silver sulfide core-shell quantum dots, an electrooptical modulator and a preparation method. According to the preparation method, octadecene-selenium is used as a selenium precursor, silver selenide quantum dots are prepared; the surfaces of the silver selenide quantum dots are coated with selenium silver sulfide alloy shells to passivate the surfaces of the silver selenide quantum dots, reduce the surface defects of the silver selenide quantum dots, construct a gentle interface barrier, inhibit auger recombination of the silver selenide quantumdots, and eliminate a local electric field in a random direction; the toxicity of the silver selenide/selenium silver sulfide core-shell quantum dots can be ignored, the silver selenide/selenium silver sulfide core-shell quantum dots are safe and reliable; perhydropolysilazane is adopted to be converted into a silicon dioxide packaging layer of the silver selenide/selenium silver sulfide core-shell quantum dots in the atmosphere and at the room temperature, and the electrooptical modulator which is continuously adjustable in working wavelength along with the size of the quantum dots in a near-infrared second window, large in modulation depth, stable in performance, long in service life, simple in structure and environmentally friendly can be prepared.

The invention provides a preparation method of a silver selenide-cobalt diselenide composite material with a Turing structure, wherein the preparation method comprises the steps: carrying out mixed reaction on nano strip-shaped cobalt diselenide, a silver salt, water and an amine solvent, to obtain the silver selenide-cobalt diselenide composite material with the Turing structure. Compared with the prior art, according to the preparation method disclosed by the invention, the regulation on the morphology of the silver selenide-cobalt diselenide composite material is realized; the interface density of the obtained silver selenide-cobalt diselenide composite material with the Turing structure is larger than that of most materials with interface structures, so that the silver selenide-cobaltdiselenide composite material with the Turing structure has excellent electro-catalytic moisture oxygen evolution performance, high Faraday efficiency, high energy efficiency and low overvoltage.

The invention discloses a preparation method of a ZIF-67-silver selenide nano composite material. The preparation method comprises the following steps: dissolving cobalt nitrate in a methanol solution, carrying out uniform ultrasonic dispersion to obtain a solution A, dissolving 2-methyl imidazole in the methanol solution, carrying out uniform ultrasonic dispersion to obtain a solution B; slowly dropwise adding the solution B into the solution A, standing, centrifuging, washing with methanol to obtain ZIF; weighing a proper amount of ZIF-67, dispersing ZIF-67 in 20 mL of water to obtain a solution a, weighing a proper amount of selenium powder, dissolving selenium powder in a hydrazine hydrate solution to obtain a solution b, adding the solutions a,b into a three-necked bottle, adding a magnet, putting the three-necked bottle in an oil bath, weighing a proper amount of silver nitrate, dissolving silver nitrate in water, adding the solution into the three-necked bottle, continuously reacting for 2 hours, centrifuging the obtained solution, and washing to obtain a finished product. The prepared nano composite ions are cubic, uniform in size, good in dispersity and low in toxicity, can show an efficient photo-thermal conversion performance under the irradiation of near-infrared light, and can be applied to the biomedical fields such as photo-thermal therapy of tumors. In addition,the method is simple in process, low in energy consumption, small in equipment number and convenient to popularize.

The invention discloses a method for preparing size-controllable organic-phase silver selenide quantum dots. The method comprises the following steps: mixing a silver source, a solvent and a surface ligand at room temperature under stirring conditions, and introducing protective gas to obtain a silver precursor; and mixing selenium powder and fatty amine at room temperature under ultrasonic conditions to obtain a selenium precursor; and heating the silver precursor to 120-180 DEG C, adding a selenium precursor, carrying out a reaction at 100-150 DEG C for a period of time, then performing cooling to room temperature, and carrying out separating and purifying to obtain the Ag2Se quantum dots. Compared with conventional Ag2Se quantum dot synthesis methods, the Ag2Se quantum dot preparation method provided by the invention mainly has the following two advantages: 1, the selenium precursor is simple to prepare, and is prepared by only subjecting selenium powder and fatty amine to ultrasonic treatment at room temperature; and 2, the size adjustable range is wide, and the fluorescence emission peak of the Ag2Se quantum dots can be adjusted within the range of 955 nm to 1612 nm. The Ag2Sequantum dots prepared by the method are good in monodispersity; the wavelength of the Ag2Se quantum dots is adjustable in a near-infrared region; and the Ag2Se quantum dots have application potentialin the fields of biomedicine, material science and the like.

A method for making monodisperse silver nanocrystals includes the following step: (1) mixing a silver nitrate with octadecyl amine as a solvent, and achieving a mixture; (2) agitating and reacting the mixture at a reaction temperature for a reaction period; (3) cooling the mixture to a cooling temperature, and achieving a deposit; and (4) washing the deposit with an organic solvent, drying the deposit at a drying temperature, and achieving monodisperse silver nanocrystals. After step (2), the method can further include a step of mixing a sulfur or selenium into the reactant to achieve monodisperse silver sulfide or silver selenide nanocrystals.

The invention relates to a method for preparing a high-performance polyvinylpyrrolidone/silver selenide/nylon flexible composite thermoelectric film. The preparation method comprises the following steps: (1) taking a selenium nanowire as a template, reacting the selenium nanowire with silver nitrate in an ethylene glycol solvent, and adding polyvinylpyrrolidone in the reaction process to prepare apolyvinylpyrrolidone-coated silver selenide multi-scale nano structure; and (2) dispersing the polyvinylpyrrolidone-coated silver selenide multi-scale nanostructure in absolute ethyl alcohol, takinga nylon filter membrane as a substrate, and performing suction filtration, vacuum drying and hot pressing to obtain the target product polyvinylpyrrolidone/silver selenide/nylon composite film. Compared with the prior art, the flexible thermoelectric thin film with high performance can be prepared, and the thin film is used for manufacturing a thermoelectric device with high output performance tosupply power to a wearable electronic device.

The invention relates to a method for preparing a high-performance polypyrrole/silver selenide/nylon flexible composite thermoelectric film. The method comprises the following steps: (1) taking a selenium nanowire as a template, reacting with silver nitrate in an ethylene glycol solvent to obtain a silver selenide nanostructure, then continuing to add a pyrrole monomer, carrying out ultrasonic treatment, then adding ammonium persulfate, stirring at room temperature, and carrying out in-situ polymerization on the silver selenide nanostructure to synthesize a polypyrrole/silver selenide nanostructure; and (2) dispersing the polypyrrole/silver selenide nanostructure in absolute ethyl alcohol, carrying out suction filtration, and carrying out vacuum drying to obtain the polypyrrole/silver selenide/nylon composite film. According to the method, the high-performance flexible thermoelectric film can be prepared, and a high-output-performance thermoelectric device is manufactured by using the film to supply power to a wearable electronic device.

The invention relates to a flexible photoelectric detector based on silver selenide quantum dots, which is characterized in that non-toxic silver selenide quantum dots are introduced to replace lead salt quantum dots to serve as a light absorption material, the lead-free and non-toxic effects of the detector can be achieved, and the design of the non-toxic flexible photoelectric detector is obtained in combination with the design of a flexible substrate. In addition, graphene or molybdenum disulfide with high electron mobility is further added as a charge extraction material in a region between the flexible substrate (1) and the silver selenide quantum dot layer (2), so that the responsivity of the photoelectric detector can be improved, and the flexible photoelectric detector with high responsivity is further obtained; and the flexible photoelectric detector is more suitable for being applied to wearable equipment, and the use safety and stability of the wearable equipment can be effectively improved. The invention further designs a manufacturing method for the photoelectric detector, a brand-new manufacturing mode is designed for the designed photoelectric detector structure through cooperation of multiple processes, the process standard for designing photoelectric detector manufacturing can be improved, and the safety and stability of the photoelectric detector are guaranteed.

The invention discloses a tumor treatment composite nano material which is characterized by being prepared from the following raw materials in parts by weight: 3-5 parts of silver sulfide quantum dots, 4-6 parts of silver selenide quantum dots, 1-2 parts of hyperbranched polytetrahydrofuran and 1-2 parts of epoxy alkoxy silicon modified bis (2-aminophenyl) disulfide. The invention also discloses apreparation method of the tumor treatment composite nano material. The tumor treatment composite nano material disclosed by the invention has the characteristics of good stability, long in-vivo circulation time, small toxic and side effects and the like, has a good drug slow release effect, has good selectivity on tumor cells, and does not have obvious systemic toxicity.

The invention discloses a method for preparing a gold-silver selenide-lead phosphate heterojunction nano-film. The method comprises the steps of firstly, depositing PbSe on the surface of an electrodeby utilizing cyclic voltammetry, then putting the electrode into a growth base solution of Ag2Se, and carrying out a reaction in a constant-temperature water bath kettle at 60 DEG C for 24 hours, thereby growing an Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode; and then, putting the Ag2Se-Pb3(PO4)2 heterojunction nano-film in a solution of HAuCl4, and carrying out a reaction in the constant-temperature water bath kettle at 60 DEG C for 6 hours, thereby generating the Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode. The method is simple inpreparation process; and the prepared Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film is not easy to damage and low in cost, and commercial production can be realized.