35 results about "Silver(I) selenide" patented technology

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (GexSe(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide. One embodiment of the process implants oxygen to silver selenide to form selenium oxide. The selenium oxide is then removed by annealing, which results in silver-rich silver selenide. Advantageously, the processes can dope silver into a variety of materials, including non-transparent materials, with relatively high uniformity and with relatively precise control.

The present invention is related to methods and apparatus to produce a memory cell or resistance variable material with improved data retention characteristics and higher switching speeds. In a memory cell according to an embodiment of the present invention, silver selenide and a chalcogenide glass, such as germanium selenide (GexSe(1−x)) are combined in an active layer, which supports the formation of conductive pathways in the presence of an electric potential applied between electrodes. Advantageously, embodiments of the present invention can be fabricated with relatively wide ranges for the thicknesses of the silver selenide and glass layers.

The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide. One embodiment of the process implants oxygen to silver selenide to form selenium oxide. The selenium oxide is then removed by annealing, which results in silver-rich silver selenide. Advantageously, the processes can dope silver into a variety of materials, including non-transparent materials, with relatively high uniformity and with relatively precise control.

The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.

The invention relates to the fabrication of a resistance variable material cell or programmable metallization cell. The processes described herein can form a metal-rich metal chalcogenide, such as, for example, silver-rich silver selenide. Advantageously, the processes can form the metal-rich metal chalcogenide without the use of photodoping techniques and without direct deposition of the metal. For example, the process can remove selenium from silver selenide.

A dendritic silver selenide nano-crystalline thin film material and the preparation method are provided. The making method of the present invention is that a substrate material with a metal silver surface, a simple substance selenium powder and an organic alcohol solvent are put into a reaction kettle of a polytetrafluoroethylene and react at a temperature between 120 DEG C and 180 DEG C. The dendritic silver selenide nano-crystalline thin film material is formed at the original place on the metal silver surface of the substrate material and cools down to the room temperature after the reaction is over. The production is cleaned with a waterless ethanol and dried under the temperature of 50 DEG C. The substrate material is the metal silver foil, of which the surface is plated with a layer of semiconductor silicon wafers of the nano metal silver, a conductive glass ITO and others. The present invention directly produces the silver selenide nano-crystalline thin film at the original place on the substrate of metal silver surface by one-step reaction and takes the simplest organic alcohol as the reaction medium; therefore the environment is moderate. Any additive and surfactant are not used and the subsequent purification step is not needed but the crystalline shape is still perfect. With the quick reaction and the convenient operation, the present invention has a broad industrial application foreground.

The invention relates to a preparation method for optimizing the thermoelectric performance of a silver selenide / nylon flexible composite film, and the method comprises the following steps: (1) takinga selenium nanowire as a template, enabling the selenium nanowire to react with silver nitrate in an ethylene glycol solvent at 40 DEG C, and carrying out separation, thereby obtaining a silver selenide nanostructure; (2) dispersing the silver selenide nanostructure in absolute ethyl alcohol, taking a nylon filter membrane as a substrate, and performing suction filtration and drying to obtain a nylon-silver selenide film; and (3) finally, carrying out hot pressing treatment on the nylon-silver selenide film obtained in the step (2) to obtain a target product. Compared with the prior art, themethod has the advantages that the high-performance flexible thermoelectric thin film can be prepared, and the thin film is used for manufacturing a high-output-performance thermoelectric device to supply power to a wearable electronic device.

The invention provides silver selenide / selenium silver sulfide core-shell quantum dots, an electrooptical modulator and a preparation method. According to the preparation method, octadecene-selenium is used as a selenium precursor, silver selenide quantum dots are prepared; the surfaces of the silver selenide quantum dots are coated with selenium silver sulfide alloy shells to passivate the surfaces of the silver selenide quantum dots, reduce the surface defects of the silver selenide quantum dots, construct a gentle interface barrier, inhibit auger recombination of the silver selenide quantumdots, and eliminate a local electric field in a random direction; the toxicity of the silver selenide / selenium silver sulfide core-shell quantum dots can be ignored, the silver selenide / selenium silver sulfide core-shell quantum dots are safe and reliable; perhydropolysilazane is adopted to be converted into a silicon dioxide packaging layer of the silver selenide / selenium silver sulfide core-shell quantum dots in the atmosphere and at the room temperature, and the electrooptical modulator which is continuously adjustable in working wavelength along with the size of the quantum dots in a near-infrared second window, large in modulation depth, stable in performance, long in service life, simple in structure and environmentally friendly can be prepared.

The invention provides a preparation method of a silver selenide-cobalt diselenide composite material with a Turing structure, wherein the preparation method comprises the steps: carrying out mixed reaction on nano strip-shaped cobalt diselenide, a silver salt, water and an amine solvent, to obtain the silver selenide-cobalt diselenide composite material with the Turing structure. Compared with the prior art, according to the preparation method disclosed by the invention, the regulation on the morphology of the silver selenide-cobalt diselenide composite material is realized; the interface density of the obtained silver selenide-cobalt diselenide composite material with the Turing structure is larger than that of most materials with interface structures, so that the silver selenide-cobaltdiselenide composite material with the Turing structure has excellent electro-catalytic moisture oxygen evolution performance, high Faraday efficiency, high energy efficiency and low overvoltage.

The invention discloses a preparation method of a ZIF-67-silver selenide nano composite material. The preparation method comprises the following steps: dissolving cobalt nitrate in a methanol solution, carrying out uniform ultrasonic dispersion to obtain a solution A, dissolving 2-methyl imidazole in the methanol solution, carrying out uniform ultrasonic dispersion to obtain a solution B; slowly dropwise adding the solution B into the solution A, standing, centrifuging, washing with methanol to obtain ZIF; weighing a proper amount of ZIF-67, dispersing ZIF-67 in 20 mL of water to obtain a solution a, weighing a proper amount of selenium powder, dissolving selenium powder in a hydrazine hydrate solution to obtain a solution b, adding the solutions a,b into a three-necked bottle, adding a magnet, putting the three-necked bottle in an oil bath, weighing a proper amount of silver nitrate, dissolving silver nitrate in water, adding the solution into the three-necked bottle, continuously reacting for 2 hours, centrifuging the obtained solution, and washing to obtain a finished product. The prepared nano composite ions are cubic, uniform in size, good in dispersity and low in toxicity, can show an efficient photo-thermal conversion performance under the irradiation of near-infrared light, and can be applied to the biomedical fields such as photo-thermal therapy of tumors. In addition,the method is simple in process, low in energy consumption, small in equipment number and convenient to popularize.

The invention discloses a method for preparing size-controllable organic-phase silver selenide quantum dots. The method comprises the following steps: mixing a silver source, a solvent and a surface ligand at room temperature under stirring conditions, and introducing protective gas to obtain a silver precursor; and mixing selenium powder and fatty amine at room temperature under ultrasonic conditions to obtain a selenium precursor; and heating the silver precursor to 120-180 DEG C, adding a selenium precursor, carrying out a reaction at 100-150 DEG C for a period of time, then performing cooling to room temperature, and carrying out separating and purifying to obtain the Ag2Se quantum dots. Compared with conventional Ag2Se quantum dot synthesis methods, the Ag2Se quantum dot preparation method provided by the invention mainly has the following two advantages: 1, the selenium precursor is simple to prepare, and is prepared by only subjecting selenium powder and fatty amine to ultrasonic treatment at room temperature; and 2, the size adjustable range is wide, and the fluorescence emission peak of the Ag2Se quantum dots can be adjusted within the range of 955 nm to 1612 nm. The Ag2Sequantum dots prepared by the method are good in monodispersity; the wavelength of the Ag2Se quantum dots is adjustable in a near-infrared region; and the Ag2Se quantum dots have application potentialin the fields of biomedicine, material science and the like.

A method of forming a non-volatile resistance variable device includes forming a patterned mass comprising elemental silver over a substrate. A layer comprising elemental selenium is formed over the substrate and including the patterned mass comprising elemental silver. The substrate is exposed to conditions effective to react only some of the elemental selenium with the elemental silver to form the patterned mass to comprise silver selenide. Unreacted elemental selenium is removed from the substrate. A first conductive electrode is provided in electrical connection with one portion of the patterned mass comprising silver selenide. A germanium selenide comprising material is provided in electrical connection with another portion of the patterned mass comprising silver selenide. A second conductive electrode is provided in electrical connection with the germanium selenide comprising material.

The invention discloses a near-infrared silver-gold-selenium fluorescent quantum dot as well as a preparation method and application thereof. The preparation method comprises the following steps: carrying out solvothermal reaction on a first uniformly mixed reaction system containing a silver source, a selenium source and a weak polar solvent to prepare a silver selenide quantum dot precursor; and carrying out cation exchange reaction on the second uniformly mixed reaction system containing the silver selenide quantum dot precursor and a gold source at 0-200 DEG C for 10-72 hours to obtain the near-infrared silver-gold-selenium fluorescent quantum dot with the fluorescence emission peak wavelength of 800-1350 nm. The silver selenide quantum dots are prepared through a simple high-temperature solvothermal method, then the silver-gold-selenium quantum dots are obtained through a cation exchange method, the synthesis process is simple and controllable, the yield is high, large-scale preparation can be achieved, meanwhile, the obtained product is uniform in size, fluorescence emission is located in near infrared, high quantum efficiency and excellent light stability are achieved, and the silver-gold-selenium quantum dots are suitable for large-scale preparation. Wide application prospects are realized in the fields of biological imaging, near-infrared devices and the like.

The invention discloses a distributed feedback laser containing silver selenide quantum dots and a preparation method thereof. The distributed feedback laser comprises a quartz substrate arranged upward in turn and a silicon dioxide periodic grating containing silver selenide quantum dots. The invention utilizes the low toxic lowest quantum state 2-fold degenerate silver selenide quantum dot to replace the lowest quantum state 8-fold degenerate lead salt quantum dot, so as to realize the low threshold near-infrared optical gain. The photothermal stability of silica is much higher than that oforganic polymers. A low threshold, high stability and environment-friendly distributed feedback near-infrared quantum dot laser can be obtained by fabricating periodic grating with silver selenide quantum dot in silicon dioxide film.

A method for making monodisperse silver nanocrystals includes the following step: (1) mixing a silver nitrate with octadecyl amine as a solvent, and achieving a mixture; (2) agitating and reacting the mixture at a reaction temperature for a reaction period; (3) cooling the mixture to a cooling temperature, and achieving a deposit; and (4) washing the deposit with an organic solvent, drying the deposit at a drying temperature, and achieving monodisperse silver nanocrystals. After step (2), the method can further include a step of mixing a sulfur or selenium into the reactant to achieve monodisperse silver sulfide or silver selenide nanocrystals.

The invention discloses a method for preparing size-controllable organic phase silver selenide quantum dots, which comprises the following steps: mixing a silver source, a solvent and a surface ligand at room temperature under stirring conditions, and introducing a protective gas to obtain a silver precursor Mix selenium powder and oleylamine at room temperature and under ultrasonic conditions to obtain a selenium precursor; raise the temperature of the above silver precursor to 120-180°C, add the selenium precursor, and react at 100-150°C for a period of time, then drop to room temperature, Ag was obtained through separation and purification 2 Se quantum dots. with existing Ag 2 Compared with Se quantum dot synthesis method, the Ag provided by the invention 2 The synthesis method of Se quantum dots mainly has the following two advantages: first, the preparation of the selenium precursor is simple, and only need to ultrasonicate the selenium powder and oleylamine at room temperature; 2 The fluorescence emission peak of Se quantum dots is adjustable in the range of 955nm to 1612nm. Ag prepared by the present invention 2 Se quantum dots have good monodispersity and tunable wavelength in the near-infrared region, and have potential applications in the fields of biomedicine and material science.

The invention relates to a method for preparing a high-performance polyvinylpyrrolidone / silver selenide / nylon flexible composite thermoelectric film. The preparation method comprises the following steps: (1) taking a selenium nanowire as a template, reacting the selenium nanowire with silver nitrate in an ethylene glycol solvent, and adding polyvinylpyrrolidone in the reaction process to prepare apolyvinylpyrrolidone-coated silver selenide multi-scale nano structure; and (2) dispersing the polyvinylpyrrolidone-coated silver selenide multi-scale nanostructure in absolute ethyl alcohol, takinga nylon filter membrane as a substrate, and performing suction filtration, vacuum drying and hot pressing to obtain the target product polyvinylpyrrolidone / silver selenide / nylon composite film. Compared with the prior art, the flexible thermoelectric thin film with high performance can be prepared, and the thin film is used for manufacturing a thermoelectric device with high output performance tosupply power to a wearable electronic device.

A dendritic silver selenide nanocrystalline film material and a preparation method thereof. The preparation method of this material is to place the base material with metallic silver surface, elemental selenium powder, and organic alcohol solvent together in a polytetrafluoroethylene reaction kettle, react at 120°C-180°C, and the metallic silver surface of the base material A thin film material composed of silver selenide nanocrystals with a dendritic structure is prepared in situ. After the reaction is completed, it is naturally cooled to room temperature, and the product is washed with absolute ethanol and dried below 50°C. The base material refers to metal silver foil, a semiconductor silicon chip coated with a layer of nano-metal silver on the surface, conductive glass ITO, etc.; the present invention directly grows selenium in situ on the substrate with a metal silver surface through a one-step chemical reaction. Silver nanocrystalline film, using the simplest organic alcohol as the reaction medium, is environmentally friendly; no additives and surfactants are used, no subsequent purification steps are required and the crystal form is perfect; the reaction is fast, the operation is convenient, and it has a wide range of industrial applications prospect.

The invention provides a silver selenide thermoelectric composite film and a preparation method and application thereof, and belongs to the technical field of thermoelectric films, and the preparation method comprises the following steps: mixing silver selenide, a solvent, a binder and a PEDOT: PSS aqueous solution, crushing, depositing on a substrate, and drying to obtain the silver selenide thermoelectric composite film. Silver selenide is adopted for preparing the composite film, in the smashing process, the particle size of the silver selenide is reduced, particles are in tight contact after deposition, the binding tightness between the particles can be further improved by adding the binder, the high Seebeck coefficient value is achieved, the internal resistance of the film is reduced, meanwhile, the binding property of the silver selenide and a substrate is improved, and by adding the PEDOT: PSS aqueous solution, the composite film is prepared. By utilizing the high conductivity characteristic, the internal resistance of the film is further reduced, and the thermoelectric performance of the film is improved. The result of the embodiment shows that the thermoelectric device prepared by the composite film prepared by the invention can generate 7.4 mv voltage by utilizing the temperature difference between the human skin and the environment.

The invention relates to a method for preparing an ultra-flexible high-performance sulfur-doped silver selenide / nylon composite thermoelectric film, which comprises the following steps: (1) taking selenium nanowires to react with silver sulfide powder under the condition of taking ethylene glycol as a solvent to obtain silver-selenium-sulfur ternary alloy powder; and (2) ultrasonically dispersing the silver-selenium-sulfur ternary alloy powder in absolute ethyl alcohol, taking a nylon filter membrane as a substrate, performing vacuum filtration, drying, and performing hot pressing treatment to obtain a target product. Compared with the prior art, the composite film has excellent flexibility and excellent thermoelectric performance, and the film is used for manufacturing a high-output-performance thermoelectric device and is expected to serve as a new power supply source of a wearable electronic device.

The invention relates to a method for preparing a high-performance polypyrrole / silver selenide / nylon flexible composite thermoelectric film. The method comprises the following steps: (1) taking a selenium nanowire as a template, reacting with silver nitrate in an ethylene glycol solvent to obtain a silver selenide nanostructure, then continuing to add a pyrrole monomer, carrying out ultrasonic treatment, then adding ammonium persulfate, stirring at room temperature, and carrying out in-situ polymerization on the silver selenide nanostructure to synthesize a polypyrrole / silver selenide nanostructure; and (2) dispersing the polypyrrole / silver selenide nanostructure in absolute ethyl alcohol, carrying out suction filtration, and carrying out vacuum drying to obtain the polypyrrole / silver selenide / nylon composite film. According to the method, the high-performance flexible thermoelectric film can be prepared, and a high-output-performance thermoelectric device is manufactured by using the film to supply power to a wearable electronic device.

The invention belongs to the technical field of material chemistry, and relates to a method for preparing an Ag2X film, wherein X refers to selenium or tellurium. The method provided by the invention comprises the following steps: firstly, adding silver nitrates and a compound of selenium or tellurium into a beaker filled with a solvent, then adding alkali and a complexing agent into the beaker, and fully stirring so as to completely dissolve the added objects, then adding a reducing agent into the beaker, after the reducing agent is completely dissolved, stopping stirring, and adding a substrate into the beaker for depositing the Ag2X film; then, after the thermostatic reaction is completed, washing the obtained Ag2X film with deionized water and absolute ethyl alcohol; and finally, drying the Ag2X film. The method provided by the invention has the advantages that the reaction condition is mild, an Ag2Se or Ag2Te film can be synthesized at one step in an aqueous solution, and the prepared film is smooth, compact and uniform; the used raw materials are cheap and easy to obtain, the process is simple, the large-scale production is easy to realize, and because of avoiding using a large quantity of organic solvents in the process of reaction, the method is in favor of environmental protection, and has a broad market prospect; and the synthesized silver selenide and silver telluride film can be widely applied to multiple fields of fast ionic conductors, nonlinear optical elements, photoelectric secondary batteries, and the like, therefore, the film has a broad market prospect.

The invention discloses a biosynthesis and purification method of silver selenide quantum dots, and belongs to the technical field of microbiology and nanotechnology. According to the biosynthesis andpurification method of the silver selenide quantum dot, silver nitrate is used as a silver source, selenium-enriched yeast is used as a synthesis carrier, culture is carried out for 10-100 h at the temperature of 30 DEG C and the speed of 200 r / min, centrifugation is carried out, thalli are removed, a supernate is collected, ultrafiltration is carried out on the supernate through an ultrafiltration tube, and finally the purified Ag2Se quantum dot is obtained. According to the method, the Ag2Se quantum dot which is about 3.9 nm in size, low in toxicity and good in water solubility is synthesized, and a lattice structure can be clearly seen under a high-resolution transmission electron microscope. According to the invention, Ag2Se quantum dots are synthesized in saccharomyces cerevisiae forthe first time, the synthesis method is friendly to conditions, strict synthesis conditions such as high temperature, high pressure and the like are not involved, and the purification method is simple to operate and has relatively high application value.

The invention relates to a flexible photoelectric detector based on silver selenide quantum dots, which is characterized in that non-toxic silver selenide quantum dots are introduced to replace lead salt quantum dots to serve as a light absorption material, the lead-free and non-toxic effects of the detector can be achieved, and the design of the non-toxic flexible photoelectric detector is obtained in combination with the design of a flexible substrate. In addition, graphene or molybdenum disulfide with high electron mobility is further added as a charge extraction material in a region between the flexible substrate (1) and the silver selenide quantum dot layer (2), so that the responsivity of the photoelectric detector can be improved, and the flexible photoelectric detector with high responsivity is further obtained; and the flexible photoelectric detector is more suitable for being applied to wearable equipment, and the use safety and stability of the wearable equipment can be effectively improved. The invention further designs a manufacturing method for the photoelectric detector, a brand-new manufacturing mode is designed for the designed photoelectric detector structure through cooperation of multiple processes, the process standard for designing photoelectric detector manufacturing can be improved, and the safety and stability of the photoelectric detector are guaranteed.

The invention discloses a tumor treatment composite nano material which is characterized by being prepared from the following raw materials in parts by weight: 3-5 parts of silver sulfide quantum dots, 4-6 parts of silver selenide quantum dots, 1-2 parts of hyperbranched polytetrahydrofuran and 1-2 parts of epoxy alkoxy silicon modified bis (2-aminophenyl) disulfide. The invention also discloses apreparation method of the tumor treatment composite nano material. The tumor treatment composite nano material disclosed by the invention has the characteristics of good stability, long in-vivo circulation time, small toxic and side effects and the like, has a good drug slow release effect, has good selectivity on tumor cells, and does not have obvious systemic toxicity.

The invention discloses a method for preparing a gold-silver selenide-lead phosphate heterojunction nano-film. The method comprises the steps of firstly, depositing PbSe on the surface of an electrodeby utilizing cyclic voltammetry, then putting the electrode into a growth base solution of Ag2Se, and carrying out a reaction in a constant-temperature water bath kettle at 60 DEG C for 24 hours, thereby growing an Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode; and then, putting the Ag2Se-Pb3(PO4)2 heterojunction nano-film in a solution of HAuCl4, and carrying out a reaction in the constant-temperature water bath kettle at 60 DEG C for 6 hours, thereby generating the Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode. The method is simple inpreparation process; and the prepared Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film is not easy to damage and low in cost, and commercial production can be realized.

The invention relates to a preparation method for optimizing the thermoelectric performance of silver selenide / nylon flexible composite film, comprising the following steps: (1) using selenium nanowires as templates, reacting with silver nitrate in ethylene glycol solvent at 40°C, and separating , to obtain the silver selenide nanostructure; (2) disperse the silver selenide nanostructure in absolute ethanol again, take the nylon filter membrane as the base, suction filter, and obtain the nylon-silver selenide thin film after drying; (3) finally, The nylon-silver selenide film obtained in step (2) is subjected to hot-pressing treatment to obtain the target product. Compared with the prior art, the method of the invention can prepare a high-performance flexible thermoelectric thin film, and use the thin film to manufacture a high-output performance thermoelectric device for powering wearable electronic devices.

The invention discloses a biosynthesis and purification method of silver selenide quantum dots, belonging to the fields of microbiology and nanotechnology. The biosynthesis and purification method of silver selenide quantum dots of the present invention uses silver nitrate as the silver source and selenium-enriched yeast as the synthesis carrier, cultures at 30°C and 200r / min for 10-100h, centrifuges, removes the bacteria, collects the supernatant, The supernatant was ultrafiltered with an ultrafiltration tube, and finally the purified Ag was obtained 2 Se quantum dots. The method of the present invention has synthesized Ag with a size of about 3.9nm, low toxicity and good water solubility. 2 Se quantum dots, the lattice structure can be clearly seen under the high-resolution transmission electron microscope. The present invention synthesized Ag in Saccharomyces cerevisiae for the first time 2 Se quantum dots, and the synthesis method has friendly conditions, does not involve harsh synthesis conditions such as high temperature and high pressure, and the purification method is simple to operate and has high application value.

The invention discloses a silver selenide nano-catalyst as well as a preparation method and application thereof, belongs to the technical field of new energy materials and electrochemical catalysis, and solves the technical problems of low selectivity and poor stability when a carbon dioxide product is subjected to electrocatalytic reduction in the prior art. When the silver selenide nano-catalyst disclosed by the invention is used for electrocatalytic reduction of carbon dioxide, the highest Faraday efficiency of generating carbon monoxide can reach 98.1%, the sustainable electrolysis time is long, and the silver selenide nano-catalyst has an excellent carbon dioxide electrocatalytic effect; meanwhile, the invention discloses a preparation method of the silver selenide nano-catalyst, according to the method, a silver-based catalyst is prepared through a simple experiment, and the silver-based catalyst has high catalytic activity and product selectivity in electrocatalytic carbon dioxide reduction; the preparation method is simple to operate and easy to implement, and the prepared silver selenide nano-catalyst has excellent carbon dioxide reduction performance.