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Flexible photoelectric detector based on silver selenide quantum dots and manufacturing method

A technology for photodetectors and manufacturing methods, which is applied to circuits, electrical components, semiconductor devices, etc., can solve problems such as limited applications and large absorption coefficients, and achieve increased responsivity, high responsivity, and improved use safety and stability Effect

Inactive Publication Date: 2020-12-25
NANJING FORESTRY UNIV
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Problems solved by technology

[0002] Photodetectors are sensors used for photoelectric detection. With the popularity of smart devices, flexible photodetectors can be widely used in wearable devices. Benefiting from the quantum confinement effect, semiconductor quantum dots have shown a variety of light-absorbing materials. Superior properties, such as adjustable absorption wavelength with size and large absorption coefficient, etc.; however, the light-absorbing quantum dots commonly used in photodetectors are lead sulfide and lead selenide quantum dots containing toxic heavy metal lead, which limits the existing optoelectronics. Applications of detectors in wearable devices

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  • Flexible photoelectric detector based on silver selenide quantum dots and manufacturing method

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Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0025] The present invention designs a flexible photodetector based on silver selenide quantum dots, which is applied to human body wearable devices to realize photoelectric detection, such as figure 1 As shown, the flexible photodetector includes a flexible substrate 1, a silver selenide quantum dot layer 2, and two electrodes 3; wherein, the silver selenide quantum dot layer 2 is fixedly covered and arranged on the upper surface of the flexible substrate 1, and the selenide The silver quantum dot layer 2 is used to realize light absorption; two electrodes 3 respectively pass through the silver selenide quantum dot layer 2 and are arranged on the upper surface of the flexible substrate 1, and the silver selenide quantum dot layer 2 is in contact with the two electrodes 3 , the bottom end of each electrode 3 is fixedly c...

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Abstract

The invention relates to a flexible photoelectric detector based on silver selenide quantum dots, which is characterized in that non-toxic silver selenide quantum dots are introduced to replace lead salt quantum dots to serve as a light absorption material, the lead-free and non-toxic effects of the detector can be achieved, and the design of the non-toxic flexible photoelectric detector is obtained in combination with the design of a flexible substrate. In addition, graphene or molybdenum disulfide with high electron mobility is further added as a charge extraction material in a region between the flexible substrate (1) and the silver selenide quantum dot layer (2), so that the responsivity of the photoelectric detector can be improved, and the flexible photoelectric detector with high responsivity is further obtained; and the flexible photoelectric detector is more suitable for being applied to wearable equipment, and the use safety and stability of the wearable equipment can be effectively improved. The invention further designs a manufacturing method for the photoelectric detector, a brand-new manufacturing mode is designed for the designed photoelectric detector structure through cooperation of multiple processes, the process standard for designing photoelectric detector manufacturing can be improved, and the safety and stability of the photoelectric detector are guaranteed.

Description

technical field [0001] The invention relates to a flexible photodetector based on silver selenide quantum dots and a manufacturing method, belonging to the technical field of semiconductor optoelectronic devices. Background technique [0002] Photodetectors are sensors used for photoelectric detection. With the popularity of smart devices, flexible photodetectors can be widely used in wearable devices. Benefiting from the quantum confinement effect, semiconductor quantum dots have shown a variety of light-absorbing materials. Superior properties, such as adjustable absorption wavelength with size and large absorption coefficient, etc.; however, the light-absorbing quantum dots commonly used in photodetectors are lead sulfide and lead selenide quantum dots containing toxic heavy metal lead, which limits the existing optoelectronics. The application of detectors in wearable devices. Contents of the invention [0003] The technical problem to be solved by the present inventi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/032H01L31/0392H01L31/109H01L31/18
CPCH01L31/035218H01L31/032H01L31/03926H01L31/109H01L31/18Y02P70/50
Inventor 唐路平郭迎庆王皖君
Owner NANJING FORESTRY UNIV
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