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Method for preparing gold-silver selenide-lead phosphate heterojunction nano-film

A nano-film and heterojunction technology, applied in the fields of electrochemistry and nano-film materials, can solve the problems of cumbersome preparation process, incompatible with the development of green chemistry, and large consumption of reagents, and achieve simple preparation process, easy large-scale production, The effect of small consumption of reagents

Inactive Publication Date: 2019-09-06
GUILIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Ag 2 The preparation process of Se is usually cumbersome, consumes a lot of reagents, and even involves the highly toxic substance He 2 SeO 3 use, does not meet the requirements of green chemical development

Method used

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  • Method for preparing gold-silver selenide-lead phosphate heterojunction nano-film
  • Method for preparing gold-silver selenide-lead phosphate heterojunction nano-film

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0018] This embodiment is used to illustrate the present invention Au-Ag 2 Se-Pb 3 (PO 4 ) 2 Characterization analysis of nano-heterojunction films and their morphology and structure.

[0019] (1) Clean the pre-cut 1cm×3cm ITO conductive glass electrode with analytical pure acetone, absolute ethanol and secondary water for 20 minutes respectively, and after drying, use a multimeter to measure the conductive surface before use.

[0020] (2) Measure 1 mL of Pb(NO 3 ) 2 solution, 1.5mL EDTA solution with a concentration of 0.2mol / L, 3.5mL SeO with a concentration of 0.01mol / L 2 solution, 3 mL of Na with a concentration of 1.25 mol / L 2 SO 4 The solution was placed in a 20mL beaker and mixed evenly to prepare the bottom solution for electrodepositing PbSe thin film.

[0021] (3) set up a three-electrode system in the bottom solution of the electrodeposited PbSe film made in step (2), wherein, the working electrode is the conductive glass electrode made in the step (1), and ...

Embodiment 2

[0028] (1) Clean the pre-cut 1cm×3cm ITO conductive glass electrode with analytical pure acetone, absolute ethanol and secondary water for 20 minutes respectively, and after drying, use a multimeter to measure the conductive surface before use.

[0029] (2) Measure 1 mL of Pb(NO 3 ) 2 solution, 1.5mL EDTA solution with a concentration of 0.2mol / L, 3.5mL SeO with a concentration of 0.01mol / L 2 solution, 3 mL of Na with a concentration of 1.25 mol / L 2 SO 4 The solution was placed in a 20mL beaker and mixed evenly to prepare the bottom solution for electrodepositing PbSe thin film.

[0030] (3) set up a three-electrode system in the bottom solution of the electrodeposited PbSe film made in step (2), wherein, the working electrode is the conductive glass electrode made in the step (1), and the counter electrode is a Pt electrode, and the reference The electrode is an Ag / AgCl electrode, and the electrodeposition is carried out by cyclic voltammetry. The potential scanning range...

Embodiment 3

[0035] (1) Clean the pre-cut 1cm×3cm ITO conductive glass electrode with analytical pure acetone, absolute ethanol and secondary water for 20 minutes respectively, and after drying, use a multimeter to measure the conductive surface before use.

[0036] (2) Measure 1 mL of Pb(NO 3 ) 2 solution, 1.5mL EDTA solution with a concentration of 0.2mol / L, 3.5mL SeO with a concentration of 0.01mol / L 2 solution, 3 mL of Na with a concentration of 1.25 mol / L 2 SO 4 The solution was placed in a 20mL beaker and mixed evenly to prepare the bottom solution for electrodepositing PbSe thin film.

[0037] (3) set up a three-electrode system in the bottom solution of the electrodeposited PbSe film made in step (2), wherein, the working electrode is the conductive glass electrode made in the step (1), and the counter electrode is a Pt electrode, and the reference The electrode is an Ag / AgCl electrode, and the electrodeposition is carried out by cyclic voltammetry. The potential scanning range...

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Abstract

The invention discloses a method for preparing a gold-silver selenide-lead phosphate heterojunction nano-film. The method comprises the steps of firstly, depositing PbSe on the surface of an electrodeby utilizing cyclic voltammetry, then putting the electrode into a growth base solution of Ag2Se, and carrying out a reaction in a constant-temperature water bath kettle at 60 DEG C for 24 hours, thereby growing an Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode; and then, putting the Ag2Se-Pb3(PO4)2 heterojunction nano-film in a solution of HAuCl4, and carrying out a reaction in the constant-temperature water bath kettle at 60 DEG C for 6 hours, thereby generating the Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film on the surface of the electrode. The method is simple inpreparation process; and the prepared Au-Ag2Se-Pb3(PO4)2 heterojunction nano-film is not easy to damage and low in cost, and commercial production can be realized.

Description

technical field [0001] The field of nano film material and electrochemical field of the present invention, particularly relate to a kind of preparation Au-Ag 2 Se-Pb 3 (PO 4 ) 2 A method for heterojunction nanofilms. Background technique [0002] "Heterojunction" refers to the interface region formed by the contact of two or more semiconductors. Because different semiconductors have different energy band gaps, heterojunctions usually have the advantages of high electron transfer rate and high luminous efficiency, so heterojunctions are often used in laser diodes, solar cells, heterostructure bipolar transistors, etc. all aspects of daily life. The preparation and study of different types of semiconductor heterojunctions has a major impact on the development of semiconductor technology and the field of electroanalytical chemistry. [0003] Ag 2 As a common semiconductor material, Se has excellent electrical and optical properties, and has been widely used in many field...

Claims

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Application Information

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IPC IPC(8): H01L21/02B82Y30/00
CPCB82Y30/00H01L21/02104H01L21/02425H01L21/02568H01L21/02628H01L21/02697
Inventor 潘宏程李向葵陈雯
Owner GUILIN UNIVERSITY OF TECHNOLOGY
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