Base plate of free standing diamond thick film for sound surface wave filter

A technology of diamond thick film and surface acoustic wave, which is applied in the field of material science, can solve the problems such as the difficulty of processing the growth surface of diamond film, achieve the effect of increasing the preparation cost and technical difficulty, solving technical problems, and increasing the response frequency
CN1688102AInactive Publication Date: 2005-10-26DALIAN UNIV OF TECH

Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Applications(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2005-10-26
Estimated Expiration
Not applicable Β· inactive patent
Patent Text Reader

Abstract

This invention relates to the application of inorganic nonmetal functional material in electric devices characterizing in applying a free pure diamond thick film without substrate as the bulk and substrate material used in a sound surface filter, applying the nucleation surface of a free-standing diamond thick film to be grinded and polished by mechanical and chemical process as the surface of a deposited interdigital converter and piezoelectric film and applying traditional preparation technology for semiconductor devices to prepare sound surface wave devices of ZnO / diamond lamination. This invention not only utilizes the high elastic factor and high sound velocity of the diamond, but also utilizing the advantage of the maximum heat conduction rate to make SAW devices have the property of large power and durability.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of material science and relates to the application of inorganic non-metallic functional materials in electronic devices. Background technique

[0002] Surface Acoustic Wave (SAW) filter is an important device used in the field of communication. In recent years, with the rapid development of communication technologies such as broadband, mobile and portable communication systems, the demand for high-frequency devices, especially GHz-level high-frequency devices, is increasing day by day. There are two ways to prepare high-frequency SAW devices: one is to use advanced semiconductor planar manufacturing technology to reduce the finger width and spacing of interdigital transducers. The development of this aspect is limited by planar manufacturing technology and has its development limit; the other One is to use high-acoustic-wave-transmission-velocity materials, combined with piezoelectric film materials on them...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More