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Chemical mechanical polishing compositions and methods relating thereto

一种抛光组合物、化学机械的技术，应用在水性分散剂、电气元件、电路等方向，能够解决延长抛光时间等问题

Inactive Publication Date: 2006-01-04
ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, simply reducing the polishing pressure increases the polishing time
However, depressions are still produced throughout the extended time

Method used

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  • Chemical mechanical polishing compositions and methods relating thereto

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0021]To prepare a high molecular weight (~200000MW) acrylic acid (AA) / methacrylic acid (MAA) (2:3 molar ratio) copolymer, use 75 g 100% acrylic acid, 135 g 100% methacrylic acid, 0.5 g + 1.9 g Sodium persulfate (Na 2 S 2 o 8 , MW=238), 270 g+42 g+380 g deionized water, 20 g 50% NaOH. 25 grams of mixed monomers were added to a 2000 milliliter four-neck reactor, followed by 270 grams of deionized water and 0.5 grams of sodium persulfate. The mixture was heated to 92°C and then the remainder of the monomer mix was added to the reactor along with a solution of 1.9 grams of sodium persulfate in 42 grams of water over 40 and 50 minutes, respectively. The reaction mixture was maintained at 92°C for an additional hour and then allowed to cool to room temperature. The crude product was examined by gas chromatography (GC) and gel permeation chromatography (GPC), and the 10% acid was neutralized with 50% NaOH solution. This process gave Mw / Mn=198000 / 30000, AA=532ppm, MAA=38ppm, pH=...

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Abstract

The present invention provides an aqueous composition useful for polishing nonferrous metal interconnects on a semiconductor wafer comprising oxidizer, inhibitor for a nonferrous metal, complexing agent for the nonferrous metal, modified cellulose, 0.01 to 5% by weight copolymer of acrylic acid and methacrylic acid, and balance water, wherein the copolymer of acrylic acid and methacrylic acid has a monomer ratio (acrylic acid / methacrylic acid) in the range of 1:30 to 30:1 and the copolymer has a molecular weight in the range of 1K to 1000K.

Description

technical field [0001] The present invention relates to chemical mechanical planarization (CMP) of semiconductor wafer materials, and more particularly to chemical mechanical planarization compositions and methods for polishing metal interconnects on semiconductor wafers in the presence of dielectric and barrier materials. Background technique [0002] Semiconductor wafers are generally silicon wafers containing a plurality of trenches in a dielectric layer arranged in a pattern of circuit interconnections. These pattern arrangements generally have a mosaic or dual damascene structure. The anti-penetration layer covers the patterned dielectric layer, and the metal layer covers the anti-penetration layer. The thickness of the metal layer is at least sufficient to fill the patterned trenches with metal to form circuit interconnections. [0003] Chemical mechanical planarization methods typically include multiple polishing steps. For example, the first step removes excess in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J5/14C08L33/00H01L21/304
CPCC09G1/04H01L21/3212
Inventor F·J·凯勒J·匡西J·K·索王红雨
Owner ROHM & HAAS ELECTRONICS MATERIALS CMP HLDG INC