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High stability displacement circuit using amorphous silicon thin film transistor

A technology of amorphous silicon thin film and displacement circuit, which is applied to instruments, static indicators, etc., can solve the problems of increased impedance value, distortion of scanning signal, and misoperation of display panel drive, so as to improve stability, life span, The effect of prolonging the use time

Inactive Publication Date: 2006-04-05
WINTEK CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the threshold voltage value of NT4 continues to increase, the impedance value between the node P1 and the power supply voltage VSS will also continue to increase, causing the node P1 to be easily affected by other signals or noise and cannot maintain a low level. state VSS
Therefore, the high-level signal VDD of the clock pulse signal CK may affect the low-voltage level VSS of the output terminal OUT through the transistor NT1, distorting the scanning signal provided by the displacement circuit, and causing malfunction of the drive of the display panel.

Method used

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  • High stability displacement circuit using amorphous silicon thin film transistor
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  • High stability displacement circuit using amorphous silicon thin film transistor

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Embodiment Construction

[0022] Relevant detailed content and technical specification of the present invention, now cooperate accompanying drawing to illustrate as follows:

[0023] see figure 1 , 2 Shown is the block diagram of the displacement register of the present invention and the timing diagrams of each output and input signal. As shown in the figure, the present invention is applied to a shift register using amorphous silicon thin film transistors as components, which can be integrated into a scanning drive circuit on a glass substrate, and its stages are sequentially connected together and output signals G1, G2, G3, G4... are sent to the gate control line of the panel; its power supply has a high-level supply voltage Vdd and a low-level supply voltage Vss, and the input signal includes two opposite phases of the first clock pulse signal CLK and the second clock pulse signal CLKB, and start signal STV.

[0024] The initial action is to connect a start signal STV in series and input it to t...

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Abstract

The invention discloses high-stable shift circuit used amorphous silicon TFT, which uses two clock pulse signal with inverse phase to control circuit operation mechanism and bias relation of all transistor to make them on alternant drive condition of positive and negative bias and inhibit critic voltage shift, or increase TFT and circuit service time.

Description

technical field [0001] The invention relates to a scanning displacement circuit using an amorphous silicon thin film transistor as a circuit component. The displacement circuit can suppress the displacement phenomenon of the critical voltage of the amorphous silicon thin film transistor element, slow down the degree of critical voltage displacement, and further improve the scanning displacement circuit. Stability, prolong the use time of the displacement circuit. Background technique [0002] In recent years, TFT panel technology has been continuously improved, including the design of driving circuits that can be integrated on the panel. For example, system on glass (SOG) technology can be realized by amorphous silicon (a-Si) process and low-temperature poly-silicon (Low Temperature poly-silicon; LTPS) process. Low-temperature poly-silicon transistors and amorphous silicon transistors have the largest The difference lies in the difference between its electrical properties a...

Claims

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Application Information

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IPC IPC(8): G09G3/20
Inventor 罗新台林义钦翁瑞兴
Owner WINTEK CORP
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