Thin film forming device and thin film forming method
A technology of thin film and vacuum container, which is applied in the field of thin film forming device and thin film forming, and can solve problems such as difficulty in obtaining impedance matching, uneven plasma density, and increased power loss
Inactive Publication Date: 2006-06-14
SHINCRON KK
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Problems solved by technology
[0004] However, if a grid is used to increase the relative density of atomic groups, the following problems exist: the structure of the thin film forming device becomes complicated, and the distribution area of the atomic groups in the vacuum vessel is limited by the size, shape, and arrangement of the grid.
[0009] In the known plasma generation unit, in the case of performing plasma processing on a large area in the vacuum container, although the antenna 165 is enlarged, there is a problem of power loss on the antenna 165 and the matching coil 167c. increases, and it is difficult to obtain impedance matching
In addition, when plasma treatment is performed over a large area, there is also a problem that the density of the plasma is not uniform according to the location
Method used
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[0038] Next, an embodiment of the present invention will be described with reference to the drawings. In addition, the present invention is not limited to the components and arrangement described below, and various changes can be made within the scope of the gist of the present invention.
[0039] figure 1 and figure 2 It is a schematic diagram explaining the sputtering apparatus 1. For ease of understanding, figure 1 is a schematic top view of a partial section, figure 2 for along figure 1 Schematic side view of a partial section along line A-B-C. The sputtering device 1 is an example of the thin film forming device of the present invention.
[0040] In this example, a sputtering apparatus 1 that performs magnetron sputtering (Magnetron sputtering) as an example of sputtering is used, but the present invention is not limited thereto, and a sputtering apparatus 1 that does not use magnetron discharge may be used. Two-pole sputtering and other known sputtering devic...
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Abstract
A thin film forming device (1) comprises a vacuum vessel (11) having a vacuum maintained therein, a gas introducing means (76) for introducing a reactive gas into the vacuum vessel (11), and a plasma generating means (61) for generating the plasma of the reactive gas in the vacuum vessel (11). And the wall surface of the vacuum vessel (11) is coated with thermally decomposable boron nitride (p).
Description
technical field [0001] The present invention relates to a thin film forming device and a thin film forming method for manufacturing optical thin films and optical devices, optoelectronic devices, semiconductor devices, etc. A thin film forming device for increasing the density of active species chemically reacting with the thin film, and a thin film forming method using the thin film forming device. Background technique [0002] Conventionally, plasma processing such as formation of a thin film, surface modification of the formed thin film, and etching has been performed on a substrate using a reactive gas formed into plasma in a vacuum container. For example, a technique is known in which a thin film made of an incomplete reactant of a metal is formed on a substrate using a sputtering technique, and the thin film made of the incomplete reactant is brought into contact with a plasma-formed reactive gas to form A thin film made of a metal compound (for example, Japanese Pate...
Claims
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IPC IPC(8): C23C14/34C23C14/00C23C14/08C23C14/10C23C14/35C23C14/56C23C14/58C23C16/44C23C16/50C23F4/00H01J37/32H01L21/31H01L21/318H05H1/46
CPCC23C14/0036C23C14/0078C23C14/083C23C14/10C23C14/352C23C14/358C23C14/564C23C14/568C23C14/5853C23C16/4404H01J37/32082H01J37/32467H01J37/32477H05H1/46H01L21/02266H01L21/02164C23C16/513H01L21/318
Inventor 宋亦周樱井武村田尊则
Owner SHINCRON KK