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Cleaning a component of a process chamber

A reaction chamber and component technology, applied in the cleaning field of reaction chamber components, can solve problems such as chuck failure, arc discharge chuck, electrode short circuit, etc.

Active Publication Date: 2006-06-28
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When a ceramic surface is damaged, the reaction chamber plasma will penetrate through these damaged areas and corrode the exposed underlying surface, and may cause arcing or short circuit with the chuck electrode, eventually causing the chuck to be damaged during processing. loss of function and loss of the substrate

Method used

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  • Cleaning a component of a process chamber
  • Cleaning a component of a process chamber
  • Cleaning a component of a process chamber

Examples

Experimental program
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Embodiment Construction

[0039] The component 100 of a reaction chamber 105 is cleaned to remove process deposits accumulated on the surface of the component 100 during the operation of the reaction chamber 105 . The reaction chamber 105 defines a processing zone 110 in which substrates such as semiconductor wafers or flat panel displays are processed with plasma. The reaction chamber 105 is figure 1 A portion of an exemplary substrate processing apparatus embodiment shown in . The component 100 has pores 205 which can be located in a ceramic 200 as shown in the top view of the embodiment shown in FIG. 2 a. For example, the air holes 205 may be shaped and dimensioned to deliver a heat transfer gas or a process gas into the reaction chamber. cleaning the component 100 to remove the process deposits that accumulated on the surface 210 of the component 100 during the plasma exposure and to remove the process deposits that build up on the inner surfaces of the pores 205 due to gas flow therethrough thi...

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Abstract

Process deposits formed on a component of a process chamber are cleaned. In the cleaning method, gas holes in the component are mechanically pinned to clean the process deposits therein. A ceramic portion of the component is then exposed to an acidic solution, such as a solution of hydrofluoric acid and nitric acid. Mechanical pinning of the gas holes may be repeated after the acid cleaning step. The component is then plasma stabilized in a plasma zone by introducing a non-reactive gas into the plasma zone and forming a plasma of the non-reactive gas in the plasma zone. In one version, the component comprises an electrostatic chuck comprising a ceramic covering an electrode and having the gas holes therein.

Description

technical field [0001] Embodiments of the present invention relate to cleaning methods for components used in processing a substrate in a reaction chamber. Background technique [0002] To manufacture circuit boards and displays, substrates such as semiconductor wafers or display panels are placed in a reaction chamber and treated with a process gas plasma. For example, in a physical vapor deposition process (PVD), a plasma sputters a target made of sputtered material to deposit the sputtered target material on the substrate. In a chemical vapor deposition process (CVD), a plasma of a deposition gas is used to deposit material on the substrate. In an etch process, a plasma is used to etch material on the substrate. The reaction chamber has various components exposed to the plasma during processing, such as a substrate support for holding the substrate, a liner, a gas distribution or exhaust ring, and a focus ring. [0003] During such substrate processing processes, the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B08B7/04B08B9/00B08B7/00C23C16/44
CPCC23C16/4407B08B9/00Y10S438/905B08B7/04B08B7/0035H01L21/304B08B3/00
Inventor 阿希什·巴特纳格尔查尔斯·S·孔泽
Owner APPLIED MATERIALS INC