Dual work function metal gate structure and related method of manufacture

Abstract

A semiconductor device and related methods of manufacture are disclosed in which dual work function metal gate electrodes are formed from a single metal layer by doping the metal layer with carbon and / or fluorine.

Description

technical field [0001] The present invention generally relates to semiconductor devices and related fabrication methods. More particularly, the present invention relates to semiconductor devices having a dual metal gate structure and related manufacturing methods. Background technique [0002] The continuing demand for increasingly densely integrated semiconductor devices, including the demand for semiconductor memory devices of ever increasing capacity, has created constant pressure to reduce the dimensions of the constituent components forming contemporary semiconductor devices. For example, the physical size of nearly every component component in conventional complementary metal-oxide-semiconductor (CMOS) devices has decreased dramatically over the past few years. This is especially true for CMOS memory devices. However, despite the ever-decreasing physical dimensions of their constituent components, contemporary CMOS memory devices must still meet increasingly demandin...

AI Technical Summary

Problems solved by technology

However, metal doping of metals to produce a change in the work function of the doped metal layer is costly and sometimes produces contradictory results

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