Transistor level shift circuit

Abstract

A kind of transistor level shift circuit is composed of P type metal-oxide semiconductor thin film transistor. The transistor level shift circuit concludes a switching circuit, a first amplification circuit and a secondary amplification circuit. The circuit structure is simple. The number of transistor is small. Thus, it can work quickly and efficiently under heavy load.

Description

technical field [0001] The present invention relates to a transistor level shifter circuit (Transistor Level Shifter Circuit), and more specifically relates to a transistor level shifter circuit implemented by a thin film transistor of the same type of transistor. Background technique [0002] Thin-Film Transistor Liquid Crystal Display (TFT LCD) has been widely used in applications such as personal computer monitors, televisions, digital cameras, and mobile phones. When fabricating a thin film transistor array, usually a single process technology, that is, a PMOS process, is avoided to use a more complicated NMOS process, so as to simplify the manufacturing process and reduce production costs. However, when the thin film transistor array is in operation, a clock signal must be used to scan the thin film transistor array to sequentially store the displayed data into pixels of the liquid crystal display. The voltage levels used by TFTs are different, so low-voltage clock sig...

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Problems solved by technology

[0004] In the level shifter disclosed in U.S. Patent No. 6,922,095, although the technology of the same-type transistor is used to make it, the circuit structure and connection method are still too complicated.

[0005] In US patents 6,300,796 and 6,600,357, a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor; CMOS) process is used, which is relatively complex in process, so the production cost is high, and it cannot be integrated on a single PM

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