Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- H C STARCK GMBH
- Publication Date
- 2006-08-30
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
Background technique
[0001] The invention relates to the preparation of high-purity MoO 2 method, especially involving MoO with a density close to the theoretical 2 boards, products containing such boards.
[0002] Indium tin oxide (ITO) and zinc-doped ITO and aluminum-doped ZnO are commonly used sputtering target materials, but their work functions (typically around 4.7eV) are not as expected when used in applications such as OLEDs. The light emission function of the is well matched.
[0003] It would be desirable to provide a sputtering target material that can be used to fabricate organic light emitting diodes that does not have the problems and limitations of ITO and zinc-doped ITO sputtering target materials. Contents of the invention
[0004] The present invention relates to high-purity MoO obtained by reducing ammonium molybdate or molybdenum trioxide in a rotary or boat-shaped furnace by using hydrogen as a reducing agent 2 powder. Powder consolidation by pressi...