Method of making MoO2 powders, products made from MoO2 powders, deposition of MoO2 thin films, and methods of using such materials
A technology of powder and film, applied in the direction of oxide conductors, electrical components, electroluminescent light sources, etc., can solve the problem of not being able to match the emission function well
Inactive Publication Date: 2006-08-30
H C STARCK GMBH
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Problems solved by technology
[0002] Indium tin oxide (ITO) and zinc-doped ITO and aluminum-doped ZnO are commonly used sputtering target materials, but their work functions (typically around 4.7eV) are not as expected when used in applications such as OLEDs. The light emission function of the well-matched
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Abstract
The invention relates to high purity MoO2 powder by reduction of ammonium molybdate or molybdenum trioxide using hydrogen as the reducing agent in a rotary or boat furnace. Consolidation of the powder by press / sintering, hot pressing, and / or HIP is used to make discs, slabs, or plates, which are used as sputtering targets. The MoO2 disc, slab, or plate form is sputtered on a substrate using a suitable sputtering method or other physical means to provide a thin film having a desired film thickness. The thin films have properties such as electrical, optical, surface roughness, and uniformity comparable or superior to those of indium-tin oxide (ITO) and zinc-doped ITO in terms of transparency, conductivity, work function, uniformity, and surface roughness. The MoO2 and MoO2 containing thin films can be used in organic light-emitting diodes (OLED), liquid crystal display (LCD), plasma display panel (PDP), field emission display (FED), thin film solar cell, low resistivity ohmic contacts, and other electronic and semiconductor devices.
Description
Background technique [0001] The invention relates to the preparation of high-purity MoO 2 method, especially involving MoO with a density close to the theoretical 2 boards, products containing such boards. [0002] Indium tin oxide (ITO) and zinc-doped ITO and aluminum-doped ZnO are commonly used sputtering target materials, but their work functions (typically around 4.7eV) are not as expected when used in applications such as OLEDs. The light emission function of the is well matched. [0003] It would be desirable to provide a sputtering target material that can be used to fabricate organic light emitting diodes that does not have the problems and limitations of ITO and zinc-doped ITO sputtering target materials. Contents of the invention [0004] The present invention relates to high-purity MoO obtained by reducing ammonium molybdate or molybdenum trioxide in a rotary or boat-shaped furnace by using hydrogen as a reducing agent 2 powder. Powder consolidation by pressi...
Claims
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Patent Type & Authority Applications(China)
IPC IPC(8): C01G39/02H05B33/14H01B1/08
Inventor L·F·麦休P·库马D·梅恩德林吴荣祯G·维廷R·尼科尔森
Owner H C STARCK GMBH
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