Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multidimensional array rapid read-write method and apparatus on dynamic random access memory

A technology of dynamic random access, reading and writing methods, applied in static memory, digital memory information, information storage, etc., to achieve the effect of saving storage space

Inactive Publication Date: 2006-09-06
XIAOSHAN IND RES INST
View PDF0 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem is even more serious for two-dimensional arrays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multidimensional array rapid read-write method and apparatus on dynamic random access memory
  • Multidimensional array rapid read-write method and apparatus on dynamic random access memory
  • Multidimensional array rapid read-write method and apparatus on dynamic random access memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] First analyze the read and write rules of DRAM. Each DRAM chip generally has 2 or 4 banks, and each bank is an array of memory cells organized in rows and columns. DRAM access includes three parts: row selection, column selection and precharge (precharge). Row selection is to give the DRAM chip an active (activation) command and row address, after t RCD At this time, the row of data represented by the row address will be copied to the row buffer inside the chip. Column selection is to read and write data on the row buffer according to the column address. Because the reading and writing are all on the row buffer when selecting the column, the speed is very fast. No matter whether the given column address is continuous or not, the data pin can transmit one number in one clock cycle (DDR can transmit two numbers in one clock cycle), such as figure 1 and figure 2 shown, but only if the data to be accessed is in the currently open DRAM row. If the data to be accessed i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The disclosed read-write method comprises: according to the capacity per line of DRAM and the read-write time ratio I / J of per row and column, determining the column value A=(CI / J)1 / 2 and row value B=(CJ / I)1 / 2 of sub-matrix divided by the 2D array; when writing 2D array on DRAM by row or column, writing the data labeled the AXB sub-matrix on one row of DRAM in turn; when reading the 2D array, selecting one by one the relative row by address conversion to read out all data in one row and turn to the next. Besides, there is an address generator in the control logic unit of DRAM. This invention saves time and space.

Description

technical field [0001] The invention relates to a method for reading and writing a dynamic random access memory (Dynamic Random Access Memory, abbreviated as DRAM), in particular to a method for reading and writing two-dimensional or more than two-dimensional arrays on the dynamic random access memory. Background technique [0002] In current computer applications, two-dimensional arrays are often processed, such as image processing, radar and sonar digital signal processing, machine vision and image tracking, synthetic aperture radar imaging, coordinate conversion, etc. Two-dimensional arrays are currently stored in one-dimensional form on the storage system of the computer, that is, from the physical address of the storage system, if the data in the row direction of the two-dimensional array is stored continuously, the data in the column direction is stored non-contiguously. of. This discontinuous storage makes it impossible to use certain fast read and write methods for ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/409G11C7/00
Inventor 莫志锋韩承德王贞松
Owner XIAOSHAN IND RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com