Method of realizing 100nm patterns with transparent no-chromium phase shift mask

Abstract

The method of realizing 100 nm pattern with transparent no-chromium phase shift mask has the features of optimized mask pattern data, proper mask pattern exposure process, proper development condition, strictly controlled chromium mask etching condition, post-exposure mask treating process, dry etching phase shifter making process, proper phase shifting layer thickness, etc. and adopts g-line 436 nm wavelength light source in preparing pattern with resolution as high as 100 nm. The method of the present invention has greatly raised exposure resolution of g-line 436 nm wavelength light source without using expensive optical photoetching equipment with 193 nm light source to produce pattern with high resolution through exposure.

Description

technical field [0001] The invention relates to the technical field of optical lithography, and relates to a new method for realizing 100 nanometer pattern processing by using a fully transparent chrome-free phase-shift mask. Background technique [0002] In microelectronics technology, optical lithography has always been the mainstream technology and is widely used in the industry. However, the resolution of optical lithography is affected by the diffraction effect and generally cannot break through the limitation of the wavelength of the optical light source. That is, if the optical light source uses 436nm, then Its lithography resolution is 0.8 micron. Although the light source wavelength of optical lithography technology has been shortened to 193nm, the optical lithography equipment using 193nm wavelength light source is very expensive (at 11 million US dollars), and it is difficult for general research institutions to afford such expensive equipment. Research has enter...

AI Technical Summary

Problems solved by technology

Although the light source wavelength of optical lithography technology has been shortened to 193nm, the optical lithography equipment using 193nm wavelength light source is very expensive (at 11 million US dollars), and it is difficult for general research institutions to afford such expensive equipment. Research has entered the era of nanotechnology. The research on nanoelectronic devices urgently needs cheap nanofabrication methods. Fully transparent chromium-free phase shift masks can meet this demand.

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