Flat-face saliant-point type packing base-board for integrated circuit or discrete device
A planar bump type, discrete device technology, applied in the direction of electrical solid devices, semiconductor/solid device manufacturing, circuits, etc., can solve the problem that it is difficult to adapt to the development direction of thin and short packaging products, the overall weight of the chip package increases, and the technical requirements are getting higher and higher. Solve high-level problems to achieve the effect of facilitating technical control, reducing technical harshness, and reducing risks
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Example Embodiment
[0030] Example 1:
[0031] Structure of Example 1 Figure 7(a), Figure 7(a) is an integrated circuit or discrete device plane bump package substrate, the base island 1 and the lead 2 on the package substrate are distributed in the shape of bumps on the front surface of the substrate , there is a thin metal layer 3 connection between the bump and the bump, the base island 1 is a unit base island composed of multiple bumps, the pin 2 is a single bump, and the fronts of the base island 1 and the pin 2 are provided with The metal layer 4, the metal layer 4 is gold, or silver, or copper, or tin, or nickel, or nickel-palladium, and the metal layer can be a single layer or a multi-layer, and the metal layer 4 can be provided on the part of the convex in the unit base island on point or on all bumps. In a single integrated circuit or discrete device package formed during subsequent packaging, the number of base islands 1 can be one or more, that is, a single unit base island or multip...
Example Embodiment
[0040] Example 2:
[0041] The structure of Embodiment 2 is shown in FIG. 7( b ). On the basis of Embodiment 1, a metal layer 4 is provided on the backside of both the base island 1 and the lead 2 .
[0042] Its production method includes the following steps:
[0043] Step 1, with embodiment 1,
[0044] Step 2, with embodiment 1,
[0045] Step 3: Remove part of the mask on the front and back sides of the metal substrate 1 to expose the area on the metal substrate to be plated with a metal layer, such as image 3 (b),
[0046] Step 4. The method is the same as in Example 1, and the figure is shown in the figure Figure 4 (b),
[0047] Step 5, the method is the same as that of embodiment 1, and the figure sees Figure 5 (b),
[0048] Step 6, the method is the same as that of embodiment 1, the figure sees Image 6 (b),
[0049] Step 7. The method is the same as that of Example 1, and the diagram is shown in Figure 7(b).
Example Embodiment
[0050] Example 3:
[0051] The structure of Example 3 is shown in Figure 7(c), which is on the basis of Example 1, and the active material layer 5 is first provided on the front of both the base island 1 and the pin 2, and then the front of the active material layer 5 is provided. A metal layer 4 is provided. The activating substance 5 is nickel, or palladium, or nickel-palladium.
[0052] Its production method includes the following steps:
[0053] Step 1, with embodiment 1,
[0054] Step 2, with embodiment 1,
[0055] Step 3, with embodiment 1,
[0056] Step 4: Plate the area where the mask layer is removed in the previous process first with an activation material layer 5 such as Figure 4 (c), and then plated with metal layer 4, such as Figure 4 (e),
[0057] Step 5, the method is the same as that of embodiment 1, and the figure sees Figure 5 (c),
[0058] Step 6, the method is the same as that of embodiment 1, the figure sees Image 6 (c),
[0059] Step 7. The m...
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