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Solid image pickup device

A camera device, solid-state technology, applied in radiation control devices, image communication, electric solid state devices, etc., can solve the problem of not obtaining signal-to-noise ratio, etc., and achieve the effect of high image quality

Inactive Publication Date: 2006-11-01
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In practice, however, it has been found that even if the amount of received light is increased by providing the anti-reflection film 110 on the entire surface of the image detection portion 102, an ideal signal-to-noise ratio cannot be obtained.

Method used

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Experimental program
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Effect test

no. 1 approach

[0030] Figure 1A and Figure 1B Shows a top view of a pixel portion in a MOS solid-state imaging device according to a first embodiment of the present invention and along the Figure 1A Cross-sectional view of midline A-B. In the semiconductor substrate 1 of the P-type silicon substrate, the pixel portion includes N - —Type image detection part 2, P ++ —Type surface layer 3, N + Type drain region 4, isolation region 5 and N-type LDD (Lightly Doped Drain) portion 8. On the surface of the semiconductor substrate 1 is formed an insulating film 6 which is a silicon dioxide film. On the insulating film 6, an antireflection film 10, a gate electrode 7, a silicon dioxide side wall 9, an interlayer dielectric film 11, a light shielding film 12, and the like are formed. The area of ​​the antireflection film 10 is smaller than the surface area of ​​the image detection portion 2 . Figure 1A The area enclosed by the thick circle shown in is the opening of the light-shielding film 12...

no. 2 approach

[0047] A solid-state imaging device according to a second embodiment of the present invention will be described below, which includes an antireflection film 10 having a size suitable for use in a camera with an interchangeable lens. The solid-state imaging device according to this embodiment is the same as that described in the first embodiment and in Figure 1A and Figure 1B The solid-state imaging device shown in has the same structure. The solid-state imaging device of the second embodiment differs from the solid-state imaging device of the first embodiment in that the area of ​​the antireflection film 10 thereof is equal to or greater than 70% of the surface area of ​​the image detecting portion 2 .

[0048] Figure 4 A pixel section including microlenses 15a and 15b and image detection sections 2a and 2b and a camera lens 20 are illustrated. exist Figure 4 , placed in a matrix in Figure 5 Of the pixel portions in the pixel region 30 of the chip shown in , the pixel...

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Abstract

A MOS solid-state image pick-up device with a high S / N ratio is provided. On a surface of a photo-detecting section 2 formed inside a semiconductor substrate, an antireflection film 10 having a smaller area than a surface area of the photo-detecting section 2 , with an insulating film 6 imposed therebetween, is provided. The antireflection film 10 is formed so as not to cover bordering portions between the photo-detecting section 2 and peripheral regions thereof. Each of a distance of a clearance S 1 between the antireflection film 10 and a gate electrode 7 and a distance of a clearance between the antireflection film 10 and an element isolation region 5 is preferably equal to or greater than 0.2 mum. When the area of the antireflection film 10 is equal to or greater than 70% of the surface area of the photo-detecting section 2 , even if used for a camera with interchangeable lenses, a fluctuation in sensitivity among pixels can be suppressed.

Description

technical field [0001] The invention relates to a MOS solid-state imaging device. Background technique [0002] Conventionally, as solid-state imaging devices, CCD (Charge Coupled Device) solid-state imaging devices and MOS solid-state imaging devices have been known. An advantage of a CCD solid-state camera is a high signal-to-noise ratio due to high sensitivity and low dark output. Because of this advantage, CCD solid-state imaging devices have traditionally dominated the camera market. However, the CCD solid-state imaging device has a disadvantage in that it takes a long time to read an image signal due to its structure in which the signal charge accumulated in the pixel image detection portion is transferred in an orderly manner by means of a vertical CCD and a horizontal CCD to the final output section, and then converted into an electrical signal. [0003] 8A and 8B illustrate an embodiment of a conventional MOS solid-state imaging device. FIG. 8A is a top view of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L27/14H04N25/00
CPCH01L27/14603H01L27/1462H01L27/14623H01L27/14627H01L27/14643H01L31/0232H01L27/14605
Inventor 稻垣诚井垣和明佐伯幸作
Owner PANASONIC CORP