Gallium nitride base blue light LED

Abstract

This invention relates to gallium nitride group blue LED, it relates to one kind of LED, especially one high efficiency gallium nitride group blue LED. The LED in this invention has high efficiency and long using life. Sapphire substrate, N_GaN layer, active layer, P-GaN layer and current expansion layer are set from top to bottom. n type table-board is set from up surface of the expansion to N-GaN layer, pillar array is set on up surface of the expansion layer, and connectors are set on the up surface and the n type layer of the N-GaN layer. Non-planar surface technique is used to damage optical resonator, and solve the total reflection problem of light on contact surface of the GaN material and air, and alumina and air. ITO transparent electrode is used to replace ally electrode to improve its transmittance.

Description

technical field [0001] The invention relates to a light-emitting tube, in particular to a high-efficiency gallium nitride (GaN)-based blue light-emitting diode. Background technique [0002] The luminous efficiency of the current GaN blue light-emitting diode is relatively low. One of the factors limiting its light-emitting efficiency is that the light generated by the active layer of the light-emitting tube will produce total reflection on the contact surface between the GaN material and the air and the two aluminum oxide and the air. And this total reflection angle is about 240. Therefore, most of the light with an incident angle of 240-900 is confined inside the device, and finally the light is converted into heat energy inside the device, which makes the operating temperature of the device too high, shortens the life of the device, and results in low light extraction efficiency. . On the other hand, the P electrode and N electrode of the existing GaN blue light-emittin...

AI Technical Summary

Problems solved by technology

[0002] The luminous efficiency of the current GaN blue light-emitting diode is relatively low. One of the factors limiting its light-emitting efficiency is that the light generated by the active layer of the light-emitting tube will produce total reflection on the contact surface between the GaN material and the air and the two aluminum oxide and the air. And this total reflection angle is about 240

Therefore, most of the light with an incident angle of 240-900 is confined inside the device, and finally the light is converted into heat energy inside the device, which makes the operating temperature of the device too high, shortens the life of the device, and results in low light extraction efficiency.

On the other hand, the P electrode and N electrode of the existing GaN blue light-emitting tubes are realized by the method of sputtering alloys, and ordinary metals will block the light, which is also a factor affecting the light output rate of GaN blue light-emitting diodes one

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