Gallium nitride based LED epitaxial slice structure and method for preparing the same
A light-emitting diode, gallium nitride-based technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light extraction efficiency, achieve the effect of improving luminous efficiency, improving light extraction efficiency, and improving performance
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Embodiment 1
[0035] see image 3 , the gallium nitride-based light-emitting diode epitaxial wafer structure described in the present invention is provided with sapphire substrate 1, undoped GaN buffer layer (in image 3 not shown), the first silicon-doped GaN layer 2, the dielectric layer 5, the second silicon-doped GaN layer 6, 3 to 5 cycles of InGaN / GaN multiple quantum wells 3, the magnesium-doped AlGaN layer and the magnesium-doped GaN layer 4 , from bottom to top undoped GaN buffer layer, first silicon-doped GaN layer 2, dielectric layer 5, second silicon-doped GaN layer 6, 3-5 cycles of InGaN / GaN multiple quantum wells 7, magnesium-doped AlGaN layer and magnesium-doped GaN layer 4 are sequentially arranged on the sapphire substrate 1; the thickness of the undoped GaN buffer layer is 10-40nm, the thickness of the first silicon-doped GaN layer is 2-3μm, and the thickness of the dielectric layer is 100-200nm , the thickness of the second silicon-doped GaN layer is 2-3 μm, the thickness...
Embodiment 2
[0045] (1) Load the (0001) orientation no-clean sapphire substrate into the reaction chamber, and 2 Under atmosphere, heat to 1080°C and bake for 10 minutes, and the pressure in the reaction chamber is 500 Torr.
[0046] (2) Grow a GaN buffer layer with a thickness of 30nm at 530°C, the growth pressure is 500Torr, the flow rate of TMGa is 50μmol / min, NH 3 The flow rate is 150 μmol / min.
[0047] (3) The GaN layer and the first silicon-doped GaN layer are grown at 1050° C., and the growth pressures are 200 Torr and 100 Torr respectively.
[0048] (4) Depositing SiO by PE-CVD at 300°C 2 layer, with a thickness of 200nm, using traditional photolithography to carve window regions of different patterns and sizes along the direction of the silicon-doped GaN layer.
[0049] (5) Clean the patterned sample and put it into the metal organic chemical vapor deposition system (MOCV system) for epitaxial growth (secondary epitaxy).
[0050] (6) Secondary epitaxy: first in H 2 The secon...
Embodiment 3
[0053] (1) Load the (0001) orientation no-clean sapphire substrate into the reaction chamber, and 2 Under atmosphere, heat to 1060°C and bake for 15 minutes, and the pressure in the reaction chamber is 500 Torr.
[0054] (2) Grow a GaN buffer layer with a thickness of 25nm at 550°C, the growth pressure is 500Torr, the flow rate of TMGa is 65μmol / min, NH 3 The flow rate is 180 μmol / min.
[0055] (3) The GaN layer and the first silicon-doped GaN layer are grown at 1030° C., and the growth pressures are 200 Torr and 100 Torr, respectively.
[0056] (4) Depositing SiO by PE-CVD at 300°C 2 , with a thickness of 150nm, use traditional photolithography to carve window regions of different patterns and sizes along the direction of n-GaN.
[0057] (5) Clean the patterned sample and put it into the metal organic chemical vapor deposition system (MOCV system) for epitaxial growth (secondary epitaxy)
[0058] (6) Secondary epitaxy: first in H 2 The second silicon-doped GaN layer was...
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