Method for the catastrophic transfer of a thin layer after co-implantation

Abstract

The invention relates to a thin-layer self-sustaining transfer method, according to which - ions of at least one species are implanted in a source substrate at a given depth relative to a surface of the source substrate at a certain dose, - bringing a stiffener into intimate contact with the source substrate, - applying heat treatment to the source substrate at a given temperature for a given time to create a weakened buried region substantially at a given depth, and without inducing thermal detachment of the thin layer, - applying a controlled pulse of energy to the source substrate in a temporally localized manner so as to induce The rest of the self-sustaining detachment.

Description

Technical field [0001] The present invention relates to a transfer method of an ultra-thin layer (also known as a thin layer) that uses the fracture self-sustaining expansion induced by impact energy. It is especially used in the fields of microelectronics, micromechanics, optics, and integrated electronics. Background technique [0002] As is known, the separation of the thin layer can be achieved by injecting chemicals into the source substrate (for example, made of silicon) to promote the formation of a defect region at a certain depth. These defects may be some tiny bubbles and / or small disks and / or tiny cavities and / or misplaced rings and / or other crystal defects, which locally disturb the crystal quality of the material; its characteristics, density, and size are greatly Depends on the species being injected (typically hydrogen injected) and the characteristics of the source substrate. A heat treatment can then be applied to allow the development of specific defects present...

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Problems solved by technology

But the article does not draw practical conclusions from it about the way to obtain high-quality thin layers at moderate cost, especially from the point of view of surface condition

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