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A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same

A semiconductor and substrate technology, applied in the field of manufacturing semiconductor devices, can solve problems such as poor conductivity profiles

Active Publication Date: 2007-01-17
INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As will be shown in detail below, this results in a poor conductivity profile at the top layer within the silicon substrate approximately at a distance of up to 10 nm from the top surface

Method used

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  • A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
  • A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same
  • A semiconductor substrate with solid phase epitaxial regrowth with reduced depth of doping profile and method of producing same

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Embodiment Construction

[0022] In the following description, the same reference numerals refer to the same elements throughout the drawings. Figures 1a-1f It relates to making a metal oxide semiconductor device by using the invention. However, as will be apparent to those skilled in the art, these inventive features may be applied in the fabrication of any other type of semiconductor device requiring a shallow junction.

[0023] Figure 1a A p-type semiconductor substrate 1 is shown. Field oxide region 3 is provided on the top surface of semiconductor substrate 1 . At specific locations, a thin oxide layer 5 is provided using techniques known to those skilled in the art. The thin oxide layer 5 can later be used as a gate oxide layer in the MOS device to be fabricated. However, the invention is not limited to the application of a thin oxide layer 5 to achieve the desired effect, as will become apparent in the description below.

[0024] Figure 1a The structure is provided with a suitable photor...

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Abstract

Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) providing an insulating layer on a top surface of the semiconductor substrate, c) making an amorphous layer in a top layer of said semiconductor substrate by a suitable implant, d) implanting a dopant into said semiconductor substrate through said insulating layer to provide said amorphous layer with a predetermined doping profile, said implant being performed such that said doping profile has a peak value located within said insulating layer, e) applying a solid phase epitaxial regrowth action to regrow said amorphous layer and activate said dopant.

Description

technical field [0001] The invention relates to a method of making a semiconductor device, comprising: [0002] a) providing a semiconductor substrate, [0003] b) providing an insulating layer on the top surface of the semiconductor substrate, [0004] c) making an amorphous layer in the top layer of the semiconductor substrate by suitable implantation, [0005] d) implanting dopants in the semiconductor substrate through said insulating layer in order to provide the amorphous layer with a predetermined doping profile, [0006] e) Applying a solid phase epitaxy regrowth operation to regrow the amorphous layer and activate the dopants. Background technique [0007] This method is known from US-A-6,063,682. According to this prior art document, heavy ions are implanted in a silicon substrate. The implanted heavy ions form an amorphous layer at the top surface of the substrate. The amorphous layer has no channels. Next, a silicon implantation step is performed to form a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/265H01L21/20H01L21/336H01L29/78
CPCH01L29/7833H01L21/2022H01L21/26506H01L29/6659H01L21/2652H01L21/2658H01L21/02667H01L21/02381
Inventor B·J·波拉克
Owner INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)