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Semiconductor element and forming method thereof

A technology of semiconductors and components, which is applied in the field of components to prevent capacitance leakage current, can solve problems such as reducing reliability, and achieve the effect of avoiding the formation of tips and improving the reliability of the process

Active Publication Date: 2007-01-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the formation of the micro-groove 45a, a tip will be formed on the bottom corner of the top electrode 60, and the tip will cause a high electric field to cause leakage current of the capacitor dielectric layer, and cause circuit open, breakdown and so on. Problems that reduce reliability such as time dependent dielectric break (TDDB)

Method used

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  • Semiconductor element and forming method thereof
  • Semiconductor element and forming method thereof
  • Semiconductor element and forming method thereof

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Embodiment Construction

[0022] Figure 3 to Figure 7 A first embodiment of the invention is shown. image 3 A partially completed DRAM cell on a semiconductor substrate 100 is shown. The substrate 100 is single crystal silicon with a lattice orientation, having an array of memory cells surrounded and isolated by shallow trench insulation (STI). The cross-sectional view of the DRAM cell area shows two adjacent MOSFET transistors, including a gate dielectric layer 102 , a gate electrode 104 and a drain or source region 106 . The gate electrode 104 is surrounded by an insulating spacer 108 , and the insulating spacer 108 can be a nitride. The gate electrode 104 and the source or drain region 106 can optionally be silicided (not shown) to reduce their resistance.

[0023] Such as image 3 As shown, a first insulating layer 110 is deposited on the substrate and planarized to the top of the MOSFET transistor. The first insulating layer 110 is generally silicon oxide deposited by low pressure chemical...

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Abstract

The present invention provides a semiconductor element and a manufacturing method, concretely relates to a device and a method for preventing capacitor leakage caused by sharp tip. The formation of sharp tip is avoided by a thicker bottom electrode which fully fills a micro-trench that induces formation of the sharp tip. Alternatively, formation of the sharp tip can be avoided by recessing the contact plug to substantially eliminate the micro-trench. The semiconductor elements and the manufacturing method can avoide the formation of the sharp tip and improve the reliability of the process.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to an element and method for preventing capacitor leakage current. Background technique [0002] As the cell density of dynamic random access memory (DRAM) increases, the size of DRAM components must be reduced, and the reduction in size is detrimental to the ability to provide the necessary capacitance of DRAM. By increasing the vertical size of the capacitor in the DRAM, the DRAM element can achieve the required capacitance value, and the increase in the vertical size is usually used in the capacitor opening to form a cup-shaped capacitor structure. Capacitor openings must be etched through the etch stop layer to expose the contact plugs, and an over-etch must be performed to ensure that each area on the semiconductor wafer fully defines the desired capacitor opening. However, when the opening of the capacitor is not completely aligned with the contact plug, but slightly sh...

Claims

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Application Information

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IPC IPC(8): H01L27/108H01L27/102H01L27/06H01L27/00H01L21/8242H01L21/8222H01L21/82
CPCH01L28/60H01L27/10855H10B12/0335
Inventor 涂国基
Owner TAIWAN SEMICON MFG CO LTD