Method for grinding GaN substrate
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SUMITOMO ELECTRIC IND LTD
- Publication Date
- 2007-01-31
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to a grinding method of a GaN substrate. Background technique
[0002] As a polishing method of a magnetic head slider, for example, a method disclosed in Patent Document 1 is known. In addition, as a polishing liquid for polishing a magnetic head slider, for example, a lapping oil composition for lapping described in Patent Document 2 is known.
[0003] On the other hand, as a method for polishing a GaN substrate (gallium nitride substrate) other than a magnetic head slider, for example, a method described in Non-Patent Document 1 is known. In this method, the GaN substrate is polished with a diamond paste having a particle size of 0.1 μm and a buckskin-like pad, and then the GaN substrate is chemically polished with a mixture of KOH and NaOH.
[0004] In addition, as another polishing method of a GaN substrate, for example, a method described in Patent Document 3 is known. In this method, a GaN substrate is ground with free a...