Method for grinding GaN substrate

A grinding method and substrate technology, which is applied in the direction of grinding devices, grinding machine tools, grinding tools, etc., can solve the problems of GaN substrate scratches and achieve the effect of suppressing scratches

Active Publication Date: 2007-01-31
SUMITOMO ELECTRIC IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, when the GaN substrate is polished with free abrasive grains, the free abrasive grains will agglomerate and coarsen on the platform, and the GaN substrate will be scratched by the coarsened particles.

Method used

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  • Method for grinding GaN substrate
  • Method for grinding GaN substrate
  • Method for grinding GaN substrate

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Embodiment Construction

[0036] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, in the description of the drawings, the same reference numerals are attached to the same or equivalent elements, and overlapping descriptions are omitted. (GaN substrate polishing equipment)

[0037] figure 1 It is a schematic perspective view showing an example of a polishing apparatus suitable for the polishing method of a GaN substrate according to this embodiment. figure 1 The shown polishing device 100 has: a platform 101 arranged on a table 113 ; and a polishing jig 10 placed on the surface 101 a of the platform 101 . In the polishing apparatus 100 , a GaN substrate is placed between the stage 101 and the polishing jig 10 , and the GaN substrate is polished by rotating the stage 101 and the polishing jig 10 . GaN substrates are suitable for use in devices such as LEDs and LDs, for example.

[0038] The platform 101 is, for example, a circu...

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PUM

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Abstract

In a polishing method of a GaN substrate according to this invention, first, while supplying a polishing solution 27 containing abrasives 23 and a lubricant 25, onto a platen 101, the GaN substrate is polished using the platen 101 and the polishing solution 27 (first polishing step). Then the GaN substrate is polished using the platen 101 in which abrasives 29 are buried, while supplying a lubricant 31 onto the platen 101 in which the abrasives 29 are buried (second polishing step).

Description

technical field [0001] The invention relates to a grinding method of a GaN substrate. Background technique [0002] As a polishing method of a magnetic head slider, for example, a method disclosed in Patent Document 1 is known. In addition, as a polishing liquid for polishing a magnetic head slider, for example, a lapping oil composition for lapping described in Patent Document 2 is known. [0003] On the other hand, as a method for polishing a GaN substrate (gallium nitride substrate) other than a magnetic head slider, for example, a method described in Non-Patent Document 1 is known. In this method, the GaN substrate is polished with a diamond paste having a particle size of 0.1 μm and a buckskin-like pad, and then the GaN substrate is chemically polished with a mixture of KOH and NaOH. [0004] In addition, as another polishing method of a GaN substrate, for example, a method described in Patent Document 3 is known. In this method, a GaN substrate is ground with free a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/304B24B37/04B24B37/12
CPCH01L21/02024C30B29/406B24B7/228C30B33/00H01L21/304B24B37/04B24B37/10
Inventor 松本直树
Owner SUMITOMO ELECTRIC IND LTD
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