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Purification method of ultra fine silicon carbide powder

A purification method, a technology of fine silicon carbide, which is applied in the field of ultrafine silicon carbide powder purification, and can solve the problems of unavoidable mixing of impurities and a large number of impurities.

Inactive Publication Date: 2007-02-14
铁生年
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that impurities are inevitably mixed in the crushing process of the above-mentioned prior art, and the smaller the particle size of the ball mill, the more impurities mixed in, and a method for purifying ultrafine silicon carbide powder is proposed

Method used

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  • Purification method of ultra fine silicon carbide powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0015] Get the fine powder of processed silicon carbide (silicon carbide purity is greater than 92%, particle diameter D50=0.7 micron or less, SiO 2 +Si content is 2%) 90 kilograms into plastic barrel, add 60 kilograms of deionized water, add 6 kilograms of analytical pure sodium hydroxide, stir for 10 hours, stand still for 10 hours, add concentrated hydrochloric acid (ρ=1.19g / cm Concentration 38% ) to 12 liters, add 300 ml of hydrofluoric acid (1:1), add 16 liters of concentrated hydrochloric acid, stir for 11 hours, stand still for 11 hours, add 180 kg of deionized water, stir, press filter, and then add 180 kg of deionized water , stir, press filter with a filter press, repeat 3-4 times, dry and pulverize after washing.

[0016] Free C

Embodiment approach 2

[0018] Get the fine powder of processed silicon carbide (silicon carbide purity is greater than 93%, particle diameter D50=0.8 micron or less, SiO 2 +Si content is 2%) 80 kilograms into plastic barrel, add 40 kilograms of deionized water, add 5 kilograms of analytical pure sodium hydroxide, stir for 10 hours, stand still for 10 hours, add concentrated hydrochloric acid (ρ=1.19g / cm Concentration 38% ) to 10 liters, add 100 ml of hydrofluoric acid (1:1), add 15 liters of concentrated hydrochloric acid, stir for 10 hours, stand still for 10 hours, add 150 kg of deionized water, stir, press filter, and then add 150 kg of deionized water , stir, press filter with a filter press, repeat 3 times, dry and pulverize after washing.

[0019] Free C

Embodiment approach 3

[0021] Get the fine powder of processed silicon carbide (silicon carbide purity is greater than 93%, particle diameter D50=0.8 micron or less, SiO 2 +Si content is 2%) 100 kilograms into plastic bucket, add 80 kilograms of deionized water, add 8 kilograms of analytical pure sodium hydroxide, stir for 12 hours, stand still for 12 hours, add concentrated hydrochloric acid (ρ=1.19g / cm Concentration 38% ) to 15 liters, add 500 ml of hydrofluoric acid (1:1), add 20 liters of concentrated hydrochloric acid, stir for 12 hours, stand still for 12 hours, add 200 kg of deionized water, stir, press filter, and then add 200 kg of deionized water , stir, press filter with a filter press, repeat 4 times, dry and pulverize after washing.

[0022] Free C

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Abstract

The present invention discloses superfine SiC powder purifying process, which includes the stops of alkali washing, acid pickling, regulating pH to 5-6, filtering, washing and stoving. During alkali washing, the SiC powder material with SiC content 90-95 % and SiO2+Si content of 1-5 % and grain size D50 of 0.50-1 micron is added into plastic barrel and washed with added deionized water and pure sodium hydroxide through stirring for 10-12 hr and stilling for 10-12 hr. During acid pickling, concentrated hydrochloric acid solution and hydrofluoric acid are added before stirring for 10-12 hr and stilling for 10-12 hr. The purified SiC powder has raised SiC content and lowered SiO2+Si content.

Description

technical field [0001] The invention relates to a method for removing impurities in the process of producing SiC fine powder and carrying out pickling, in particular to a method for purifying ultrafine silicon carbide powder. Background technique [0002] The production of SiC fine powder ceramic raw materials for semiconductor manufacturing adopts the ball milling method to produce ultra-fine SiC powder with a purity greater than 96% and an average particle size of 0.8 μm. In order to ensure the high purity of SiC fine powder, an acid cleaning process must be carried out. [0003] Using physical ultra-fine pulverization technology, the industrial production process of silicon carbide fine powder is carried out. The purity of silicon carbide is greater than 96%, and D50 is less than 0.80 microns. The silicon carbide powder material itself is a wear-resistant material, and impurities are inevitably mixed in during the crushing process. The smaller the particle size of the bal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36C04B35/565C04B35/626
Inventor 铁生年岛井骏藏李宪国宋启森王宁峰莫鹏君宣俊刚
Owner 铁生年