Stabilizing system of plasma process

Abstract

The system comprises: a plasma reaction chamber used for processing plasma; an impedance matching network; a switch component with a first end, a second end and a first switch control end, and the first end and first switch control end is connected to the control circuit in order to decide if the first end and second end of the switch will be on-state; a control circuit used for outputting the control signals; and a high frequency power used for providing high frequency power source. The impedance matching network comprise a first end, a second end and a matching control end; its first end is coupled to the plasma reaction chamber, its second end is coupled to the high frequency power, and its matching control end is coupled to the second end of the first switch component. The control signals are used to decide if a self-alignment impedance match is made for the high frequency power.

Description

technical field [0001] The present invention relates to a semiconductor process device, and in particular to a plasma process stabilization system. Background technique [0002] As early as the beginning of the 20th century, plasma was applied to many fields. With the development of industries (especially high-tech industries such as semiconductors and optoelectronics), plasma reactors are popularized and widely used in the manufacture of various components (such as chips, memories, transistors, etc.). In semiconductor manufacturing, plasma can be used in etching, sputtering, and chemical vapor deposition. [0003] 1 is a block diagram of a known semiconductor machine using plasma for film deposition. This machine includes a radio frequency (Radio Frequency, RF) power supply 100, an impedance matching network (Matching Network) 102, a low frequency power supply 104, a switching element 106, and a control system. Circuit 108 and plasma reaction chamber (Chamber) 110 . The ...

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Plasma chamber for

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