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Semiconductor oxidation apparatus

A semiconductor and equipment technology, applied in the field of semiconductor oxidation equipment

Inactive Publication Date: 2011-06-29
RICOH KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if the distance L1 between the semiconductor sample 1020 and the monitoring window 1026 is set short during the oxidation process, it will cause local inconsistencies between the vapor density distribution on the semiconductor sample 1020 and the temperature distribution on the semiconductor sample 1020, resulting in In-plane distribution of oxidation amount and lead to lower yield
On the other hand, if the distance L2 between the monitoring window 1026 and the microscope 1028 is set short, the refractive index of the monitoring window may be changed under the influence of heat generated by the heater, and such as the lens assembled in the microscope 1028 Optical components may thermally deform and produce focus shifts, thereby reducing measurement accuracy

Method used

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  • Semiconductor oxidation apparatus
  • Semiconductor oxidation apparatus
  • Semiconductor oxidation apparatus

Examples

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no. 1 example

[0041] The top wall 40 of the oxidation chamber 12 has a monitoring window 42 made of light-transmitting heat-resistant material, which is located above the base 16 and faces the semiconductor sample 20 placed at the monitoring position. Above the monitoring window 42 outside the oxidation chamber 12 is provided a camera 44 equipped with a microscope (hereinafter simply referred to as a microscope 44 ) forming a monitoring device. The microscope 44 is preferably mounted on a mount 54 by a camera movement mechanism 52 having three motors 46, 48 and 50 so that the microscope 44 moves in two mutually perpendicular directions (X and Y directions) in a horizontal plane, and It moves in a direction (Z direction) perpendicular to the 2 directions (X and Y directions) with the optical axis of the microscope 44 pointing up and down. The microscope 44 preferably has an autofocus function so that the focus can be automatically adjusted with an accuracy of the order of µm. In order to mi...

no. 2 example

[0083] In this embodiment, an AlAs layer is used as the selective oxidation layer, but the selective oxidation layer may include other elements such as Ga. In addition, the content of the selective oxidation layer may be set higher than the content of the AlGaAs layer forming the DBR mirror, so that the oxidation rate of the DBR mirror is higher than that of the selective oxidation layer. In addition, the material used in the active region of the quantum well can be changed, and the semiconductor layer including Al and As can be selectively oxidized to form the current confinement structure of the VCSEL. Furthermore, the present invention is not limited to VCSELs, and the present invention can be applied in a similar manner to other types of lasers such as edge emitting lasers. In other words, the present invention can be applied in a similar manner to the manufacture of semiconductor elements having a structure such that a current confinement structure can be formed by select...

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Abstract

A semiconductor oxidation apparatus is provided with a sealable oxidation chamber, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part provided outside the oxidation chamber and configured to supply water vapor into the oxidation chamber, a monitoring window provided in a top wall of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, a moving mechanism that is configured to move one of the base and the monitoring part in a vertical direction or moving the base and the monitoring part; an interruption part used for interrupting the oxidation of the semiconductor sample; a part for obtaining an oxidation rate of part of the semiconductor sample based on the image obtained by the monitoring part, and obtaining the needed additional oxidation amount based on the oxidation rate; and a part for additionally oxidizing the part of the semiconductor sample by the amount of additional oxidation.

Description

technical field [0001] The present invention generally relates to a semiconductor oxidizing device and a method for manufacturing a semiconductor element, and more particularly relates to a semiconductor oxidizing device and a method for manufacturing a semiconductor element that oxidizes a semiconductor device containing aluminum (A1) and arsenic (As) from the peripheral edge portion toward the central portion semiconductor element, and is particularly suitable for the manufacture of an oxidation-confined surface-emitting laser in which the dimensions of the current confinement portion and the current injection portion are appropriately adjusted. Background technique [0002] There are semiconductor lasers with a current confinement structure to improve current flow efficiency. A vertical cavity surface emitting laser (VCSEL) is an example of such a semiconductor laser. VCSELs emit light in a direction perpendicular to the substrate, and compared with so-called edge-emitt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/31H01S5/183
CPCH01L21/68742H01S5/18358H01S5/32366H01S5/34353H01L21/68785H01S2304/04H01L21/31662H01L21/67103H01S5/18313B82Y20/00H01S5/423H01L21/67253H01L21/67109H01S5/34306H01L21/68764H01L21/02238H01L21/02255H01L21/31H01S5/183
Inventor 佐藤俊一轴谷直人伊藤彰浩梅本真哉禅野由明山本高稔
Owner RICOH KK
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