Reverting method of low dielectric materials and porous low-dielectric layer

Abstract

The invention relates to a method for returning low-dielectric material, used on the substrate with low-dielectric material. Wherein, said substrate has been processed, to increase the dielectric constant of low-dielectric material. And the invention is characterized in that it processes the low-dielectric material with plasma to reduce its dielectric constant.

Description

technical field [0001] The invention relates to a processing method for low dielectric materials, in particular to a recovery method for the dielectric constant of low dielectric materials. Background technique [0002] With the vigorous development of integrated circuits, in order to reduce the resistance-capacitance (RC) time lag caused by the interconnection and break through the bottleneck of operating speed, low-dielectric materials have become indispensable in today's semiconductor processes. missing important role. [0003] In order to make the dielectric constant of the low dielectric material closer to that of air (=1), the industry has developed low dielectric materials with many nanometer or sub-nanometer pores. However, this porous low-k dielectric material tends to absorb moisture, gas, or other pollutants after etching, ashing, solvent cleaning, or chemical-mechanical polishing processes, resulting in an increase in its dielectric constant and a change in its ...

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Problems solved by technology

[0006] Another object of the present invention is to provide a recovery method for a porous low-k layer to solve the problem of a rise in the dielectric constant of the porous low-k material due to the previous chemical mechanical polishing process

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