Semiconductor memory device

Abstract

A semiconductor memory device includes an I / O line, a first sense amplifier connected to the first I / O line to amplify a signal applied on the first I / O line in response to a first control signal, a second sense amplifier for amplifying an output signal of the first sense amplifier in response to a second control signal, and a disabling unit for disabling the first control signal in response to an output signal of the second sense amplifier.

Description

technical field [0001] The present invention relates to a semiconductor memory device, and more particularly, the present invention relates to an I / O line sense amplifier for sensing and amplifying data of an I / O line. Background technique [0002] Generally, semiconductor memory devices transfer data using input / output (I / O) lines. An I / O data line used for data transfer between a data I / O pad and a cell area or a core area is called a global data line (GIO). Global data lines (GIOs) are globally arranged across multiple groups. One output of the bit line sense amplifier is passed to the global data line via a local data line (LIO). [0003] What is needed is a circuit for transferring data between global data lines and local data lines. In the case of DRAM, an I / O sense amplifier (IOSA) is used to transfer data from the local data lines to the global data lines during a read operation. In a write operation, a write driver is used to transfer data from the global data l...

AI Technical Summary

Problems solved by technology

[0013] Therefore, this has an adverse effect on power consumption, which presents a huge burden on the mobile storage device

Images