Nonaqueous electrolyte secondary battery and negative electrode thereof
A non-aqueous electrolyte, secondary battery technology, applied in secondary batteries, battery electrodes, electrode manufacturing, etc., can solve problems such as inability to increase capacity and insufficient improvement of cycle deterioration.
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Embodiment 1
[0339] As the target material, a mixture of Si and C (a disc having an area ratio of Si and C of about 100:9) was used. As a current collector substrate, use an average surface roughness (Ra) of 0.2 μm and a tensile strength of 280 N / mm 2 , 0.2% endurance is 220N / mm 2 , Electrolytic copper foil with a thickness of 18 μm. The active material thin film was formed for 45 minutes using a DC sputtering device ("HSM-52" manufactured by Shimadzu Corporation) to obtain a thin film negative electrode.
[0340] Mount the current collector substrate on a water-cooled fixture, maintain it at about 25°C, and use an electric density of 4.7W / cm under the following atmospheric conditions 2 , The accumulation speed (film formation speed) is about 1.8nm / sec (0.108μm / min) for film formation, and the atmospheric condition is: depressurize the chamber to 4×10 -4 After Pa, high-purity argon gas of 40 sccm was passed through the chamber, and the opening degree of the main valve was adjusted so as...
Embodiment 2
[0387] An active material thin film was formed to form a thin film negative electrode in the same manner as in Example 1, except that the area ratio of Si and C in the target was changed to 100:2. At this time, film formation was performed at a deposition rate of about 2.3 nm / sec for 40 minutes.
[0388] From scanning electron microscope (SEM) observation of the thin film cross section of the obtained thin film negative electrode, it was found that the thickness of the formed thin film was 5 μm.
[0389] When the composition of the thin film was analyzed, the thin film contained 6 atomic % of element C, and its C concentration ratio Q(C) to the element C concentration in SiC was equivalent to 0.13. Atomic concentration ratio Si / C / O=1.00 / 0.07 / 0.08.
[0390] Calculate the Raman value of the film, no RC=c peak is detected, no RSC=sc peak is detected, RS=0.45.
[0391] The thin film was subjected to X-ray diffraction measurement, and no clear peak of SiC was detected, and XIsz=0...
Embodiment 3
[0395] An active material thin film was formed to produce a thin film negative electrode in the same manner as in Example 1, except that a target material obtained by sintering a mixture of Si particles and C particles was used. At this time, film formation was performed for 45 minutes at a deposition rate of approximately 1.7 nm / sec.
[0396] From scanning electron microscope (SEM) observation of the thin film cross section of the obtained thin film negative electrode, it was found that the thickness of the formed thin film was 5 μm.
[0397] Analysis of the composition of the thin film revealed that the thin film contained 30 atomic % of element C, and its C concentration ratio Q(C) to the concentration of element C in SiC was equivalent to 0.63. Atomic concentration ratio Si / C / O=1.00 / 0.45 / 0.06.
[0398] The Raman value of the film was obtained, RC=0.09, RSC=0.13, RS=0.59.
[0399] The thin film was subjected to X-ray diffraction measurement, and no clear peak of SiC was d...
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