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Phase-changeable memory device and read method thereof

A technology for storage devices and storage elements, which is applied in the direction of static memory, read-only memory, digital memory information, etc., and can solve the problems of reducing the readout margin of the sense amplifier

Active Publication Date: 2011-10-12
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, during a read operation, the "sensing margin" of the sense amplifier may be inadvertently reduced, or the supply voltage VCC may drop below a predetermined voltage level (eg, 1.5V)

Method used

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  • Phase-changeable memory device and read method thereof
  • Phase-changeable memory device and read method thereof
  • Phase-changeable memory device and read method thereof

Examples

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Embodiment Construction

[0034] Preferred embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

[0035] Figure 4 is a block diagram illustrating structural features of a phase variable memory device according to an illustrative embodiment of the present invention. like Figure 4As shown in , the phase variable memory device 100 includes: a memory cell array 110, an address decoder 120, a bit line selection circuit 130, discharge circuits 135 and 136, a clamp circuit 140, a precharge circuit 150, a bias circuit 160, a read Output amplifier 170, control unit 180, and high voltage circuit 200.

[0036] The memory cell array 1...

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PUM

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Abstract

Disclosed is a phase-changeable memory device and a related method of reading data. The memory device is comprised of memory cells, a high voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell includes a phase-changeable material and a diode connected to a bitline. The high voltage circuit provides a high voltage from a power source. The precharging circuit raises the bitline up to the high voltage after charging the bitline up to the power source voltage. The bias circuit supplies a read current to the bitline by means of the high voltage. The sense amplifier compares a voltage of the bitline with a reference voltage by means of the high voltage, and reads data from the memory cell. The memory device is able to reduce the burden on the high voltage circuit during the precharging operation, thus assuring a sufficient sensing margin during the sensing operation.

Description

technical field [0001] The subject matter disclosed herein is related to semiconductor memory devices. In particular, the subject matter disclosed herein relates to a memory device using a phase changeable material memory device, and a method of reading data using such a memory device. [0002] This U.S. nonprovisional patent application claiming priority under U.S.C. §199 to Korean Patent Application No. 2005-115629 filed on November 30, 2005, and Korean Patent Application No. 2005-127038 filed on December 21, 2005, will Its entire content is hereby incorporated by reference. Background technique [0003] A semiconductor memory is a device capable of selectively storing and retrieving data. Semiconductor memory devices are roughly classified into Random Access Memory (RAM) and Read Only Memory (ROM). RAM is a type of memory including dynamic RAM (DRAM) and static RAM (SRAM). ROM is a type of memory including programmable ROM (PROM), erasable PROM (EPROM), electrical EPR...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/06G11C16/02G11C16/26
CPCG11C5/143G11C5/145G11C7/06G11C7/1051G11C7/12G11C11/5678G11C13/0004G11C13/0026G11C13/004G11C2213/72
Inventor 赵佑荣崔炳吉金杜应吴泂录赵柏衡鲁有桓
Owner SAMSUNG ELECTRONICS CO LTD
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