Capacitor structure

Abstract

The structure of capacitance includes first capacitor and second capacitor. The first capacitor includes first electrode, second electrode, and first insulating layer; second electrode is collocated at lower part of the first electrode, and the first insulating layer is collocated between the first electrode and the second electrode. Being collocated at lower part of the first capacitor, the second capacitor is connected to the first capacitor in parallel. The second capacitor includes multiple patternized metal layers, which constitute third and fourth electrodes, and multiple plugs of dielectric layer windows, and second insulating layer. Stacked each patternized metal layer is collocated at second insulating layer, and plugs of dielectric layer windows connect these patternized metal layers. Each patternized metal layer includes part of third electrode and part of fourth electrode.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a capacitor structure. Background technique [0002] With the increase of the integration level of semiconductor components, the size of the components is gradually reduced, which relatively makes the space for the capacitor smaller and smaller, and thus reduces the capacitance value of the capacitor. However, after entering the deep sub-micron process, the problem of the reduction of the capacitance value of the capacitor is even more serious. [0003] In the design of integrated circuits, in order to increase the capacitance value of integrated circuit capacitors, there are three more effective methods: first, reduce the thickness of the dielectric film between the electrodes; however, this method is more difficult to control the formed dielectric film Layer uniformity and stability. Second, the surface area of ​​the electrode is increased; however, because the process is very cum...

AI Technical Summary

Problems solved by technology

[0002] With the increase in the integration of semiconductor components, the size of the components is gradually reduced, and the space for capacitors is relatively smaller and smaller, thus reducing the capacitance value of capacitors.

After entering the deep sub-micron process, the problem of the capacitance value of the capacitor is reduced is even more serious.

[0003] In the design of integrated circuits, in order to increase the capacitance value of integrated circuit capacitors, there are three more effective methods: first, reduce the thickness of the dielectric film between the electrodes; however, this method is more difficult to control the formed dielectric film Layer uniformity and stability

Second, increase the surface area of ​​the electrode; however, because the process is very cumbersome, it will cause difficulties in mass production

Among them, metal-insulator-metal capacitors and metal-wire capacitors are widely used in deep submicron ICs, but their capacitance per unit area is relatively low

In addition, if a material with a high dielectric constant is used, although a high capacitance density can be obtained, there will be serious reliability problems.

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