RF power amplifier
a power amplifier and rf technology, applied in the field of radio frequency power combining systems and methods, can solve the problems of limiting the amount of energy available for amplifying, difficult impedance matching, and large transistor siz
Active Publication Date: 2020-01-07
BAE SYST INFORMATION & ELECTRONICS SYST INTERGRATION INC
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- Abstract
- Description
- Claims
- Application Information
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Benefits of technology
The present patent text describes an RF power amplifier with increased bandwidth and reduced lateral dimension. The amplifier includes an input coupler with a first resistor and first capacitor, an input phase difference network, and an output coupler with a second resistor and second capacitor. The amplifier also includes at least one RF path crossing and a DC bias injection network. The technical effects of the invention include increased bandwidth and reduced lateral dimension of the RF power amplifier.
Problems solved by technology
However, one drawback of associated with increasing the size of the transistors, is that it becomes difficult to impedance match.
There is always a limit in the amount of energy available to use for amplifying.
Method used
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Embodiment Construction
[0041]FIG. 1 is a schematic circuit diagram of a PRIOR ART radio frequency (RF) power amplifier 10 which includes a first Wilkinson coupler 12, at least one amplification circuit 14 including a first amplifier 14A and a second amplifier 14B and a second Wilkinson coupler 16.
[0042]The first Wilkinson coupler 12 includes an RF input port 12A, a first output port 12B, a second output port 12C, a first nominally quarter wavelength transmission line 12D, a second nominally quarter wavelength transmission line 12E and a first resistor 12F connected between the first output port 12B and the second output port 12C. The first amplifier 14A includes an input and an output and the second amplifier 14B includes an input and an output. The second Wilkinson coupler 16 includes a first input port 16A, a second input port 16B, an output port 16C, a third nominally quarter wavelength transmission line 16D, a fourth nominally quarter wavelength transmission line 16E and a second resistor 16F connecte...
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An RF power amplifier includes an input coupler including a first resistor and a first capacitor, an input phase difference network of the input coupler including a first input direct current (DC) bias injection network and a second capacitor connected in series with the first resistor. The second capacitor increases a bandwidth of the RF power amplifier. The RF power amplifier may further include a first power amplifier and a second power amplifier. The first input DC bias injection network provides power to the first power amplifier and the second power amplifier. The RF power amplifier includes a lateral dimension narrower than a lateral dimension of an RF power amplifier comprising bias circuitry on two opposing sides.
Description
BACKGROUNDTechnical Field[0001]The present disclosure relates to systems and methods for radio frequency (RF) power combining. More particularly, the present disclosure relates to RF or microwave power amplifiers. Specifically, the present disclosure relates to RF or microwave power amplifiers including an increased bandwidth and a reduced lateral dimension.Background Information[0002]Generally, increasing the output power capability of a radio frequency (RF) or microwave power amplifier typically requires the use of transistors with larger current and / or voltage handling capability. Extending this approach in an RF power amplifier design over wide bandwidths has practical limits in that large transistors are typically difficult to impedance match resulting in a loss of achievable gain, efficiency, and bandwidth.[0003]Generally, power combining RF or microwave amplifiers with optimally sized transistors for efficiency using couplers is typically used to reach specified output power ...
Claims
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IPC IPC(8): H03F3/68H03F1/56H03F3/21H03F1/42H03F3/19
CPCH03F1/42H03F3/211H03F3/19H03F1/56H03F2200/423H03F2200/451
Inventor BOIRE, DANIEL C.
Owner BAE SYST INFORMATION & ELECTRONICS SYST INTERGRATION INC