Layered body of temporary adhesive
a temporary adhesive and layered technology, applied in the field of temporary adhesives, can solve the problems of broken or deformed thinned semiconductor wafers, and achieve the effects of excellent heat resistance, easy peeling, and excellent spin coating properties
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
example 1
[0113]For formation of a first separation layer (B1), a film with a thickness of about 2 μm was formed from each of the separation layer-forming compositions (1) to (5) on a silicon wafer of 300 mm (thickness: 770 μm) by spin coating, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to the film by spin coating so that the thickness was about 110 μm. The silicon wafer having this resin layer and a support layer of glass wafer of 300 mm (thickness: 700 μm) were bonded in a vacuum bonder (LF bonder, manufactured by SUSS MicroTec KK) such that the resin was put between the silicon wafer and the support layer. Thus, a layered body was produced. The layered body was then heated on a hot plate at 140° C. for 15 minutes and at 190° C. for 10 minutes. Thereafter, the following tests were carried out. The results are ...
example 2
[0114]For formation of a first separation layer (B1), a film with a thickness of about 2 μm was formed from each of the separation layer-forming compositions (1) to (5) by spin coating on a wafer bump-forming surface of a silicon wafer of 300 mm (thickness: 700 μm) on a surface of which tin-copper bumps with a height of 80 μm and a diameter of 105 μm were formed between scribe lines with a width of 110 μm in an area of 15 mm2 at a pitch of 200 μm, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to the film by spin coating such that the thickness was about 110 μm. The silicon wafer having this resin layer and a support layer of glass wafer of 300 mm (thickness: 700 μm) were bonded in a vacuum bonder so that the resin was put between the silicon wafer and the support layer. Thus, a layered body was produced. ...
example 3
[0115]For formation of a first separation layer (B1), a film with a thickness of about 2 was formed from each of the separation layer-forming compositions (1) to (5) on a support layer of a glass wafer of 300 mm (thickness: 700 μm) by spin coating, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to a silicon wafer of 300 mm (thickness: 770 μm) by spin coating such that the thickness was about 110 μm. The support layer of the glass wafer having the separation layer and the silicon wafer having the resin layer were bonded in a vacuum bonder (manual bonder, manufactured by SUSS MicroTec KK) so that the separation layer faces the resin layer. Thus, a layered body was produced. The layered body was then heated on a hot plate at 150° C. for 15 minutes and at 190° C. for 10 minutes. Thereafter, the following tests...
PUM
| Property | Measurement | Unit |
|---|---|---|
| heat resistance | aaaaa | aaaaa |
| temperature | aaaaa | aaaaa |
| pressure | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 


