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Layered body of temporary adhesive

a temporary adhesive and layered technology, applied in the field of temporary adhesives, can solve the problems of broken or deformed thinned semiconductor wafers, and achieve the effects of excellent heat resistance, easy peeling, and excellent spin coating properties

Active Publication Date: 2021-01-26
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0032]The present invention allows obtaining the following effects. That is the layered body for processing the rear surface of the wafer opposite to the circuit surface of the wafer, which is the temporary adhesive loaded between the support and the circuit surface of the wafer, and comprises the adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded and a separation layer (B) that includes a polyorganosiloxane and is releasably bonded. Using the polyorganosiloxane having a specific structure for the separation layer (B) allows the separation layer to have excellent spin coating property on the circuit surface of the wafer and excellent heat resistance during joining of the adhesive layer and processing of the rear surface of the wafer, and allows the separation layer to be easily peeled after polishing of the rear surface of the wafer and to be easily removed by a solvent from the wafer to which the separation layer is attached after peeling.
[0033]In the processing of the side opposite to the circuit surface of the wafer, the wafer is made thin by polishing. A through silicon via (TSV) or the like is then formed, the thin wafer is peeled from the support, and a layered body of the wafer is formed. Thus, three-dimensional mounting is carried out. Before or after this time, an electrode or the like is also formed on the rear surface of the wafer. In thinning of the wafer and a TSV process, the wafer bonded to the support is heated at 250 to 350° C. However, the layered body as the temporary adhesive used in the present invention has heat resistance thereof.MODES FOR CARRYING OUT THE INVENTION
[0034]The present invention is a layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, which is a temporary adhesive loaded between a support and the circuit surface, comprising an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) that includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit (D unit) of RRSiO2 / 2 (provided that each R is bonded to a silicon atom as a Si—C bond), and at least one R is an aralkyl group, an epoxy group, or a phenyl group.
[0035]In the present invention, the support and the wafer are temporarily bonded through the temporary adhesive layer, and the rear surface opposite to the circuit surface of the wafer is processed by polishing or the like. Thus, the thickness of the wafer can be made thin.
[0036]The temporary bonding is capable of bonding during polishing of the rear surface of the wafer, and separating the support from the thin wafer after polishing of the rear surface of the wafer.
[0037]In the present invention, the adhesive layer (A) forming the temporary adhesive layer is formed of an adhesive layer (A)-forming composition. The adhesive layer (A)-forming composition contains the following polysiloxane and an additive other than the polysiloxane.

Problems solved by technology

When a large force is applied for the detachment, the thinned semiconductor wafer may be broken or deformed.

Method used

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Examples

Experimental program
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Effect test

example 1

[0113]For formation of a first separation layer (B1), a film with a thickness of about 2 μm was formed from each of the separation layer-forming compositions (1) to (5) on a silicon wafer of 300 mm (thickness: 770 μm) by spin coating, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to the film by spin coating so that the thickness was about 110 μm. The silicon wafer having this resin layer and a support layer of glass wafer of 300 mm (thickness: 700 μm) were bonded in a vacuum bonder (LF bonder, manufactured by SUSS MicroTec KK) such that the resin was put between the silicon wafer and the support layer. Thus, a layered body was produced. The layered body was then heated on a hot plate at 140° C. for 15 minutes and at 190° C. for 10 minutes. Thereafter, the following tests were carried out. The results are ...

example 2

[0114]For formation of a first separation layer (B1), a film with a thickness of about 2 μm was formed from each of the separation layer-forming compositions (1) to (5) by spin coating on a wafer bump-forming surface of a silicon wafer of 300 mm (thickness: 700 μm) on a surface of which tin-copper bumps with a height of 80 μm and a diameter of 105 μm were formed between scribe lines with a width of 110 μm in an area of 15 mm2 at a pitch of 200 μm, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to the film by spin coating such that the thickness was about 110 μm. The silicon wafer having this resin layer and a support layer of glass wafer of 300 mm (thickness: 700 μm) were bonded in a vacuum bonder so that the resin was put between the silicon wafer and the support layer. Thus, a layered body was produced. ...

example 3

[0115]For formation of a first separation layer (B1), a film with a thickness of about 2 was formed from each of the separation layer-forming compositions (1) to (5) on a support layer of a glass wafer of 300 mm (thickness: 700 μm) by spin coating, and heated and baked at 100° C. for 1 minute and at 160° C. for 1 minute, to form each of separation layers (1) to (5). For formation of an adhesive layer (A), a polysiloxane resin (available from Wacker Chemie AG) was applied to a silicon wafer of 300 mm (thickness: 770 μm) by spin coating such that the thickness was about 110 μm. The support layer of the glass wafer having the separation layer and the silicon wafer having the resin layer were bonded in a vacuum bonder (manual bonder, manufactured by SUSS MicroTec KK) so that the separation layer faces the resin layer. Thus, a layered body was produced. The layered body was then heated on a hot plate at 150° C. for 15 minutes and at 190° C. for 10 minutes. Thereafter, the following tests...

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Abstract

A temporary adhesive is good peelability, heat resistance and cleaning removability after polishing of the rear surface of the wafer. A layered body for processing a rear surface of a wafer opposite to a circuit surface of the wafer, the layered body being a temporary adhesive loaded between a support and circuit surface of the wafer and including an adhesive layer (A) that includes a polyorganosiloxane to be cured by a hydrosilylation reaction and is releasably bonded, and a separation layer (B) includes a polyorganosiloxane and is releasably bonded, in which the polyorganosiloxane forming the separation layer (B) is a polyorganosiloxane containing a siloxane unit of RRSiO2 / 2 (provided that each R is bonded to a silicon atom as a Si—C bond), and at least one R is an aralkyl group, epoxy group, or phenyl group. Methods for producing and separating these layered bodies and composition for forming the separation layer.

Description

TECHNICAL FIELD[0001]The present invention relates to a temporary adhesive for fixing a wafer on a support during polishing of a rear surface of the wafer, and a layered body of the same.BACKGROUND ART[0002]For semiconductor wafers that are conventionally two-dimensionally integrated in a plane direction, a semiconductor integration technology of integrating (stacking) the plane wafers in a three-dimensional direction for the purpose of further integration has been required. The three-dimensional stacking is a technology in which wafers are integrated into a multilayer by connecting the wafers with a through silicon via (TSV). During integration into a multilayer, each wafer to be integrated is made thin by polishing a surface (i.e., rear surface) opposite to a surface on which a circuit is formed, and the thinned semiconductor wafers are layered.[0003]Each semiconductor wafer before thinning (herein, simply referred to as wafer) is bonded to a support for polishing by a polisher. T...

Claims

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Application Information

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Patent Type & Authority Patents(United States)
IPC IPC(8): H01L21/683C09J183/06B32B7/06B32B37/12B32B7/12B32B43/00C09J183/04H01L21/304H01L21/02C09D183/04B32B38/10B32B38/00C09J5/00C08G77/20C08G77/12
CPCH01L21/6836B32B7/06B32B7/12B32B37/12B32B38/0008B32B38/10B32B43/006C09D183/04C09J5/00C09J183/04C09J183/06H01L21/02H01L21/304H01L21/6835B32B2250/02B32B2383/00B32B2457/14C08G77/12C08G77/20C09J2203/00C09J2301/502C09J2483/00H01L2221/6834H01L2221/68327H01L2221/68381H01L2221/68386Y10S156/93Y10T156/11C08L83/00C08K5/56C09J2203/326
Inventor KAMIBAYASHI, SATOSHIOGINO, HIROSHIENOMOTO, TOMOYUKISAWADA, KAZUHIRO
Owner NISSAN CHEM IND LTD