Interconnect structure with gas dielectric compatible with unlanded vias
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[0011] According to one aspect, the present invention forms an integrated circuit device by providing a pattern of wiring lines over an insulating layer, a first wiring line laterally separated from a second wiring line by a layer of sacrificial material. A portion of the layer of sacrificial material is removed to recess an upper surface of the layer of sacrificial material below upper surfaces of the first and second wiring lines. A layer of capping material is provided over the first and second wiring lines and over the recessed upper surface of the layer of sacrificial material. Then, a consumption reaction is performed through the layer of capping material to consume at least a further portion of the layer of sacrificial material, leaving an air dielectric between the first and second wiring lines bounded on an upper surface by the capping layer.
[0012] According to another aspect, the present invention forms an integrated circuit device by providing a pattern of wiring lines ov...
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