Processing apparatus and cleaning method

Abstract

Provided is a parallel-plate-type processing apparatus (10), which performs plasma CVD and includes a chamber (11) to be cleaned. To perform cleaning of the chamber (11), plasma of a gas including fluorine is generated outside the chamber (11), and supplied into the chamber (11). During the cleaning, an RF power is applied to electrode plates (12, 17) inside the chamber (11).

Description

[0001] The present invention relates to a processing apparatus and a cleaning method in which an efficient cleaning is possible.[0002] Various CVD (Chemical Vapor Deposition) apparatuses are used for manufacturing electronic devices, such as semiconductor devices, LCD (Liquid Crystal Display) devices, etc. Plasma CVD apparatuses are widely used for forming high quality films.[0003] The plasma CVD apparatus forms a film on a semiconductor wafer contained inside a decompressed chamber, using a CVD method. The CVD method employs a gas phase reaction. Thus, films are formed only on the surface of the wafers, but on the surface (internal wall, etc.) of a chamber member. Thus formed films cause particles to be generated, thereby lowering the yield of the products. In such circumstances, it is necessary to regularly clean the inside of the chamber, to remove the films formed on the chamber member.[0004] A well-known method for cleaning the inside of the chamber is an in-situ plasma cleanin...

AI Technical Summary

Benefits of technology

[0008] The present invention has been made in consideration of the above. It is accordingly an object of the present invention to provide a processing apparatus and a cleaning method by which a cleaning with high efficiency is possible.

[0038] A focus ring 13 is provided on the upper surface of the susceptor 12. In this structure, plasma can effectively contact the wafer W mounted on the susceptor 12. There is provided in the susceptor 12 a lift pin which can go up and down for receiving and providing the wafer.

[0049] After the SiOF film having a predetermined thickness is formed on the wafer W, or after a predetermined time, the system controller 100 stops applying an RF power to the lower electrode, and closes the valves VC, VD, and VF, so as to stop supplying the chamber 11 with SiF.sub.4, SiH.sub.4, and Ar. After this, the electrostatic chuck is released. The system controller 100 closes the valve VE so as to stop supplying O.sub.2 and applying an RF power to the upper electrode. Then, the wafer W is carried out from the chamber 11, and hence completing the film formation process.

Problems solved by technology

Thus formed films cause particles to be generated, thereby lowering the yield of the products.

However, plasma is generated inside the chamber, so that the chamber member is likely to be deteriorated.

Using this remote plasma cleaning method, the chamber member is unlikely to be deteriorated.

A problem in the remote plasma cleaning method is that it requires a relatively long period of time for the cleaning.

Using the remote plasma cleaning method, it takes a long time for cleaning entirely the inside of the chamber, resulting that a part of the chamber member is deteriorated due to the excessive cleaning.

Accordingly, in the conventional CVD apparatus, the cleaning of the chamber is not performed with high efficiency, and a high yield of the products is not sufficiently be obtained.

Images