Liquid crystal display device
a technology of liquid crystal display and display device, which is applied in the direction of semiconductor devices, semiconductor/solid-state device details, instruments, etc., can solve the problems of poor product reliability and achieve the effect of improving product reliability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
first embodiment
[0045] Please refer to FIG. 4A and FIG. 4B, a front view of the TFT-LCD device and a cross-sectional view of the wire-collecting area according to the present invention are shown. FIG. 4B is the cross-sectional view of FIG. 4A in the XX′ direction. First, a series of the procedures forming TFTs, a wire-collecting area 411, and an outer lead bonding (OLB) area 412 are executed on a transparent glass substrate 42. After such procedures, a plurality of protruding metal wires 43 will be formed in the wire-collecting area 411 as illustrated in FIG. 4B. The active area 41, the wire-collecting area 411 and the OLB area 412 are electrically connected. The material of the metal wires 43 is usually molybdenum (Mo), aluminum (Al) or the stack of Mo and Al. In general, a protective film 44, such as indium tin oxide (ITO) or indium-doped zinc oxide (IZO), is sputtered on the surface of the metal wires 43 in order to prevent from oxidation of the metal wires 43.
[0046] After the above steps, the b...
second embodiment
[0047] Please refer to FIG. 5A and FIG. 5B, a front view of the TFT-LCD device and a cross-sectional view of the wire-collecting area according to the present invention are shown. FIG. 5B is the cross-sectional view of FIG. 5A in the XX′ direction. First, a series of the procedures forming TFTs, a wire-collecting area 411, and an outer lead bonding (OLB) area 412 are executed on a transparent glass substrate 42. After such procedures, a plurality of protruding metal wires 43 will be formed in the wire-collecting area 411 as illustrated in FIG. 5B. The active area 41, the wire-collecting area 411 and the OLB area 412 are electrically connected. The material of the metal wires 43 is usually molybdenum (Mo), aluminum (Al) or the stack of Mo and Al. In general, a protective layer 44, such as indium tin oxide (ITO) or indium-doped zinc oxide (IZO), is sputtered on the surface of the metal wires 43 in order to prevent from oxidation of the metal wires 43.
[0048] After the above steps, an o...
third embodiment
[0050] Please refer to FIG. 6A and FIG. 6B, a front view of the TFT-LCD device and a cross-sectional view of the OLB area according to the present invention are shown. FIG. 6B is the cross-sectional view of FIG. 6A in the YY′ direction. First, a series of the procedures forming TFTs, a wire-collecting area 511, and an outer lead bonding (OLB) area 512 are executed on a transparent glass substrate 52. After such procedures, a plurality of protruding outer leads 58 will be formed in the OLB area 512 as illustrated in FIG. 6B. The active area 51, the wire-collecting area 511 and the OLB area 512 are electrically connected.
[0051] After the above steps, the black matrix [BM] layer process is executed. First, an organic resin material is formed on the substrate by the spin-coating method. Then, the organic resin material in the active area 51 and the wire-collecting area 511 is entirely removed, and that in the OLB area 512 is partially removed by exposure, development and baking, forming...
PUM
| Property | Measurement | Unit |
|---|---|---|
| height | aaaaa | aaaaa |
| area | aaaaa | aaaaa |
| height | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More