Heating apparatus to heat wafers using water and plate with turbolators

Abstract

Embodiments of the invention provide a fluid processing method and apparatus. The apparatus includes a substrate support assembly positioned in a processing volume, a disk shaped member positioned in the processing volume in parallel orientation with a substrate supported on the substrate support assembly, a fluid outlet positioned in a central location of the disk shaped member, and: a plurality of turbolators positioned on an upper surface of the disk shaped member, the turbolators being configured to generate a uniform turbulent flow of fluid traveling from the fluid outlet to a perimeter of the substrate. The method includes flowing a heated processing fluid over a plurality of turbolators that are positioned under a substrate being processed to control the temperature of the substrate during processing.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] Embodiments of the invention generally relate to an apparatus and method for controlling the temperature of a substrate during fluid processing. [0003] 2. Description of the Related Art [0004] The semiconductor processing industry relies upon several methods for depositing conductive materials onto substrates, such as silicon wafers or large area glass substrates, for example. More particularly, deposition methods such as physical vapor deposition, chemical vapor deposition, and electrochemical plating are commonly used to deposit conductive materials or metals onto substrates and into features. Another deposition method that has been used in the semiconductor processing industry is electroless plating. However, electroless plating techniques have presented challenges to producing uniform deposition of conductive materials. [0005] One challenge with electroless deposition processes is that they are highly dependent ...

AI Technical Summary

Benefits of technology

The invention provides a fluid processing cell that controls the temperature of a substrate during processing. The cell includes a substrate support assembly, a disk shaped member, and a plurality of turbolators positioned on the disk shaped member. The turbolators generate a uniform turbulent flow of fluid traveling from the fluid outlet to the perimeter of the substrate. The invention also provides an electroless deposition cell for semiconductor substrates that includes a substrate support assembly, a fluid distribution member, and a plurality of turbolators. The cell can dispense an electroless processing solution onto a frontside of the substrate and a heated fluid into a space between the backside of the substrate and the fluid distribution member while generating a turbulent uniform outward flow of the heated fluid across the backside of the substrate. The invention also provides an electroless deposition method that includes dispensing an electroless processing solution onto a production surface of the substrate, dispensing a heated fluid into a space between the backside of the substrate and the fluid distribution member, and generating a turbulent uniform outward flow of the heated fluid across the backside of the substrate.

Problems solved by technology

However, electroless plating techniques have presented challenges to producing uniform deposition of conductive materials.

One challenge with electroless deposition processes is that they are highly dependent upon temperature, i.e., if one portion of a substrate is as little as 1° C. warmer than another portion of the substrate, then the warmer portion of the substrate will experience a substantial increase in the electroless deposition plating rate as compared to the cooler portion of the substrate.

This difference in the deposition rate in the warmer areas of the substrate causes uniformity variations, and as such, electroless plating processes have generally not been favored for semiconductor processing.

Another challenge with respect to electroless deposition cells is achieving effective backside sealing.

The electroless deposition chemistry generally has surfactants and other constituents that tend to diffuse to the back of the substrate, resulting in contamination and / or deposition on the backside of the substrate.

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