Apparatus for single-wafer-processing type CVD

a technology of single-wafer processing and apparatus, applied in the direction of coating, metallic material coating process, chemical vapor deposition coating, etc., can solve the problems of reducing yield, contaminating semiconductor production lines, damaging semiconductor wafers, and generating particles, so as to achieve the effect of effectively preventing the deposition of unnecessary portions

a technology of single-wafer processing and apparatus, applied in the direction of coating, metallic material coating process, chemical vapor deposition coating, etc., can solve the problems of reducing yield, contaminating semiconductor production lines, damaging semiconductor wafers, and generating particles, so as to achieve the effect of effectively preventing the deposition of unnecessary portions

US20050098111A1Inactive Publication Date: 2005-05-12ASM JAPAN
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  • Apparatus for single-wafer-processing type CVD
  • Apparatus for single-wafer-processing type CVD
  • Apparatus for single-wafer-processing type CVD

Examples

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Effect test

embodiment

[0052] An embodiment of the present invention is described using Cu film deposition using the reactor shown in FIG. 1 as an example. After a semiconductor wafer is transferred from an evacuated load-lock chamber (not shown) to a susceptor 8, the susceptor is raised to a reaction position by a susceptor elevating means. At this time, the periphery of the susceptor is sealed by an O-ring provided at the lower portion of a separation plate 5, and the wafer-handling chamber 11, and the reaction chamber 12 are completely separated. At this time, the periphery of the wafer of 2 mm is completely covered by the guard ring 7. By supplying Ar from the wafer-handling chamber through holes 9 provided in the susceptor, deposition onto the back side and the edge of the wafer is prevented. After the susceptor is raised into the reaction chamber, 1000 sccm of inert gas is brought in from a gas inlet port 13. While the inert gas is emitted onto the wafer from holes 10 provided in the showerhead 3 a ...

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Abstract

A single-wafer-processing type CVD apparatus includes: (a) a reaction chamber including: (i) a susceptor having at least one gas discharge hole to flow a gas into the reaction chamber via a back side and a periphery of the wafer into the reaction chamber; (ii) a showerhead; (iii) an exhaust duct positioned in the vicinity of the showerhead and provided circularly along an inner wall of the reaction chamber; and (iv) a circular separation plate provided coaxially with the exhaust duct to form a clearance with the bottom of the exhaust duct; and (b) a temperature-controlling apparatus for regulating the temperature of the showerhead. The separation plate has a sealing portion to seal a periphery of the susceptor and to separate the reaction chamber from a wafer-handling chamber when the susceptor rises.

Description

BACKGROUND OF THE INVENTION [0001] This is a divisional application of U.S. patent application Ser. No. 10 / 403,179 filed Mar. 28, 2003 which claims the benefit of U.S. Provisional Application No. 60 / 372,624, filed Apr. 12, 2002. The disclosure of the above applications is herein incorporated by reference in its entirety.FIELD OF THE INVENTION [0002] The present invention relates to single-wafer-processing type CVD (Chemical Vapor Deposition) which forms a thin film on a semiconductor wafer, which is an object-to-be-processed. DESCRIPTION OF THE RELATED ART [0003] Due to high integration of a semiconductor apparatus, interconnects using Cu, which has lower electrical resistance than Al interconnects which were used in the past, have come into use. Additionally, when Cu is used for interconnects, it becomes necessary to form a metal film such as TiN, TaN, etc., which had not conventionally been used before, as a barrier metal for preventing diffusion of Cu. In the present circumstance...

Claims

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Application Information

Patent Timeline
12 May 2005
Publication
US20050098111A1
IPC
C23C16/44; C23C16/455; C23C16/458; C23C16/54; H01L21/285; H01L21/3065
CPC
C23C16/4409; C23C16/4412; C23C16/45521; C23C16/54; C23C16/45572; C23C16/4585; C23C16/4557; C23C16/45565
Inventors
SHIMIZU, AKIRA; FUKUDA, HIDEAKI