Electrode for dry etching a wafer
a technology of electrodes and semiconductors, applied in the direction of electrical equipment, basic electric elements, electric discharge tubes, etc., can solve the problems of increasing the contamination of semiconductor wafers by particles, yield and reliability of semiconductor chips, and contaminating semiconductor wafers
Inactive Publication Date: 2005-08-18
KIM YOUNG YUL
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[0025] Therefore, the present invention has been made in view of the above problems, and it is an object of the present invention to provide an electrode for dry etching a semiconductor wafer using plasma, which can effectively remove foreign materials deposited on the lower and the sides surfaces as well as the upper surface of the edge of the semiconductor wafer without causing damage to the wafer.
Problems solved by technology
Therefore, these materials contaminate the semiconductor wafer by the aforementioned route during fabrication.
Particularly, in case that the diameter of the wafer increases from 200 mm to 300 mm, the radius of the edge of the wafer also increases, thereby more increasing the contamination of the semiconductor wafer by the particles.
Since the materials deposited and accumulated on the edge of the semiconductor wafer 100 reduce the yield and the reliability of the semiconductor chip, these materials need to be fully removed.
When the poly-silicon layer of the edge of the semiconductor wafer is removed using the conventional dry etching apparatus, the poly-silicon layer on the upper surface of the edge of the semiconductor wafer can be removed but the poly-silicon layer on the lower and the side surfaces of the edge of the semiconductor wafer cannot be fully removed, or can only be imperfectly removed.
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[0038]FIG. 1 is a partial cross-sectional view of an electrode for dry etching a semiconductor wafer in accordance with the present invention. The electrode of the present invention comprises a pair of electrodes, i.e., a first electrode 10 and a second electrode 20. The first electrode 10 and the second electrode 20 are means for generating plasma for removing foreign materials deposited and accumulated on the edge of the semiconductor wafer.
[0039] Herein, the first electrode 10 is used as an anode and the second electrode 20 is used as a cathode. However, the first electrode 10 may be used as a cathode and the second electrode 20 may be used as an anode.
[0040] The same as the conventional electrode, the first electrode 10 is shaped as a flat circle. A ring-shaped first protrusion 10a is formed on the bottom surface of the first electrode 10. A gas inlet hole 10b is formed between the first protrusion 10a and the circumference of the first electrode 10. The gas inlet hole 10b ser...
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Abstract
Disclosed is an electrode for dry etching a wafer. The electrode includes a first electrode and a second electrode. The first electrode includes a first flat plate and a ring-shaped first protrusion corresponding to one surface of the edge of a wafer, and the second electrode includes a second flat plate and a ring-shaped second protrusion corresponding to the other surface of the edge of the wafer. The first plate and the second flat plate are the same dimension, and the first protrusion and the second protrusion are the same dimension.
Description
TECHNICAL FIELD [0001] The present invention relates to a dry etching of a semiconductor wafer, and more particularly to an electrode for dry etching a semiconductor wafer using plasma, thereby removing foreign material deposited on the edge of the semiconductor wafer for manufactuing integrated circuit chips. BACKGROUND ART [0002] As well known to those skilled in the art, during the fabrication of high integrated semiconductor chips, multiple layers 110 and 120 such as a poly-silicon layer, a nitride layer, a metal layer, etc. are deposited and accumulated on the edge of a semiconductor wafer 100, as shown in FIG. 5. Further, as shown in FIG. 6, particles broken off the deposited layers on the edge of the semiconductor wafer 100 are generated while transferring the semiconductor wafer 100 or by equipment 200, and introduced into the central portion of the semiconductor wafer 100, thereby contaminating the integrated circuit chips. [0003] Moreover, a gate electrode of a semiconduct...
Claims
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Login to View More IPC IPC(8): H01L21/3065C23F1/00H01J37/32
CPCH01J37/32541H01J37/32009H01L21/3065
InventorKIM, YOUNG YUL
OwnerKIM YOUNG YUL