Method of forming a vertical NAND flash memory array

Abstract

Memory devices, arrays, and strings are described that facilitate the use of vertical floating gate memory cells in NAND architecture memory strings, arrays, and devices. NAND Flash memory strings, arrays, and devices in accordance with embodiments of the present invention, include vertical Flash memory cells to form NAND architecture memory cell strings and memory arrays. These vertical memory cell NAND architecture strings allow for an improved high density memory devices or arrays that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and still allow for appropriate device sizing for operational considerations.

Description

RELATED APPLICATION [0001] This Application is a Divisional of U.S. application Ser. No. 10 / 738,556, titled “VERTICAL NAND FLASH MEMORY ARRAY,” filed Dec. 17, 2003, (pending) which is commonly assigned and incorporated herein by reference.TECHNICAL FIELD OF THE INVENTION [0002] The present invention relates generally to integrated circuits and in particular the present invention relates to NAND architecture Flash memory devices. BACKGROUND OF THE INVENTION [0003] Memory devices are typically provided as internal storage areas in the computer. The term memory identifies data storage that comes in the form of integrated circuit chips. There are several different types of memory used in modern electronics, one common type is RAM (random-access memory). RAM is characteristically found in use as main memory in a computer environment. RAM refers to read and write memory; that is, you can both write data into RAM and read data from RAM. This is in contrast to read-only memory (ROM), which ...

AI Technical Summary

Benefits of technology

[0009] NAND architecture Flash memory devices and arrays, in accordance with embodiments of the present invention, facilitate the utilization of NAND architecture floating gate memory cells in high density memory arrays or NAND strings. Memory embodiments of the present invention utilize vertical Flash memory cells to form NAND architecture memory cell strings and memory arrays. These vertical memory cell NAND architecture strings allow for improved high density memory devices or arrays that can take advantage of the feature sizes semiconductor fabrication processes are generally capable of and still allow for appropriate device sizing for operational considerations.

Problems solved by technology

Most RAM is volatile, which means that it requires a steady flow of electricity to maintain its contents.

As soon as the power is turned off, whatever data was in RAM is lost.

In many cases, the feature sizes of the devices are limited by the device characteristics before the minimum feature size that the process is capable of is reached.

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