Method of forming a vertical NAND flash memory array
Patent Information
- Authority / Receiving Office
- US · United States
- Patent Type
- Applications(United States)
- Current Assignee / Owner
- MICRON TECH INC
- Publication Date
- 2005-12-01
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
RELATED APPLICATION
[0001] This Application is a Divisional of U.S. application Ser. No. 10 / 738,556, titled “VERTICAL NAND FLASH MEMORY ARRAY,” filed Dec. 17, 2003, (pending) which is commonly assigned and incorporated herein by reference.TECHNICAL FIELD OF THE INVENTION
[0002] The present invention relates generally to integrated circuits and in particular the present invention relates to NAND architecture Flash memory devices. BACKGROUND OF THE INVENTION
[0003] Memory devices are typically provided as internal storage areas in the computer. The term memory identifies data storage that comes in the form of integrated circuit chips. There are several different types of memory used in modern electronics, one common type is RAM (random-access memory). RAM is characteristically found in use as main memory in a computer environment. RAM refers to read and write memory; that is, you can both write data into RAM and read data from RAM. This is in contrast to read-only memory (ROM), which ...