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Eddy current sensing of metal removal for chemical mechanical polishing

a technology of electromagnetic sensing and metal removal, applied in the direction of lapping machines, manufacturing tools, instruments, etc., can solve the problems of reducing the throughput of the cmp apparatus, affecting the yield of the substrate, and affecting the use of the substrate, so as to improve yield and throughput, stop the process of polishing, and reduce the overpolishing and underpolishing

Inactive Publication Date: 2006-01-12
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0019] Implementations of the invention can include zero or more of the following possible advantages. The endpoint detector can sense the polishing endpoint of a metal layer in-situ. The magnetic field apparatus for the endpoint detector can be embedded in the platen below a polishing pad. The magnetic field apparatus can be protected from polishing environment, e.g., corrosive slurry. The endpoint detector need not use complex electronics. Polishing can be stopped with reasonable accuracy. Overpolishing and underpolishing substrate can be reduced, thereby improving yield and throughput.

Problems solved by technology

One problem in CMP is determining whether the polishing process is complete, i.e., whether a substrate layer has been planarized to a desired flatness or thickness, or when a desired amount of material has been removed.
On the other hand, underpolishing (removing too little) of a conductive layer leads to electrical shorting.
This is a time-consuming procedure that reduces the throughput of the CMP apparatus.
Alternatively, the examination might reveal that an excessive amount of material has been removed, rendering the substrate unusable.
Unfortunately, the proposed eddy current sensing techniques typically require complex electronics.

Method used

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  • Eddy current sensing of metal removal for chemical mechanical polishing
  • Eddy current sensing of metal removal for chemical mechanical polishing
  • Eddy current sensing of metal removal for chemical mechanical polishing

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Embodiment Construction

[0032] Referring to FIGS. 1 and 2A, one or more substrates 10 can be polished by a CMP apparatus 20. A description of a similar polishing apparatus 20 can be found in U.S. Pat. No. 5,738,574, the entire disclosure of which is incorporated herein by reference. Polishing apparatus 20 includes a series of polishing stations 22 and a transfer station 23. Transfer station 23 transfers the substrates between the carrier heads and a loading apparatus.

[0033] Each polishing station includes a rotatable platen 24 on which is placed a polishing pad 30. The first and second stations can include a two-layer polishing pad with a hard durable outer surface or a fixed-abrasive pad with embedded abrasive particles. The final polishing station can include a relatively soft pad. Each polishing station can also include a pad conditioner apparatus 28 to maintain the condition of the polishing pad so that it will effectively polish substrates.

[0034] A two-layer polishing pad 30 typically has a backing ...

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Abstract

A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation application and claims the benefit of priority under 35 U.S.C. Section 120 of U.S. application Ser. No. 10 / 447,165, filed May 27, 2003, which is a divisional of U.S. application Ser. No. 09 / 574,008, filed on May 19, 2000, now U.S. Pat. No. 6,924,641. The disclosure of each prior application is considered part of and is incorporated by reference in the disclosure of this application.BACKGROUND [0002] The present invention relates generally to chemical mechanical polishing of substrates, and more particularly to methods and apparatus for monitoring a metal layer during chemical mechanical polishing. [0003] An integrated circuit is typically formed on a substrate by the sequential deposition of conductive, semiconductive or insulative layers on a silicon wafer. One fabrication step involves depositing a filler layer over a non-planar surface, and planarizing the filler layer until the non-planar surface i...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): B24B49/00B24B37/013B24B37/20B24B49/02B24B49/12G01B7/06G01N27/90H01L21/00
CPCB24B37/013B24B37/205G01B7/105B24B49/105B24B49/12B24B49/02
Inventor HANAWA, HIROJIJOHANSSON, NILSSWEDEK, BOGUSLAWBIRANG, MANOOCHER
Owner APPLIED MATERIALS INC
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