Semiconductor substrate processing chamber and substrate transfer chamber interfacial structure

Abstract

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.

Description

RELATED PATENT DATA [0001] This patent resulted from a continuation application of U.S. patent application Ser. No. 10 / 695,727, filed Oct. 28, 2003, entitled “Semiconductor Substrate Processing Chamber and Accessory Attachment Interfacial Structure”, naming Craig M. Carpenter, Ross S. Dando, Allen P. Mardian, Kevin T. Hamer, Raynald B. Cantin, Philip H. Campbell, Kimberly R. Tschepen and Randy W. Mercil as inventors, the disclosure of which is incorporated by reference; which patent resulted from a divisional application of U.S. patent application Ser. No. 10 / 082,599, filed Feb. 23, 2002, entitled “Interfacial Structure for Semiconductor Substrate Processing Chambers and Substrate Transfer Chambers and for Semiconductor Substrate Processing Chambers and Accessory Attachments, and Semiconductor Substrate Processor”, naming Craig M. Carpenter, Ross S. Dando, Allen P. Mardian, Kevin T. Hamer, Raynald B. Cantin, Philip H. Campbell, Kimberly R. Tschepen and Randy W. Mercil as inventors, ...

AI Technical Summary

Benefits of technology

[0009] In one implementation, a semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material.

[0010] In one implementation, a semiconductor substrate processing chamber and accessory attachment interfacial structure includes a body sized and shaped to engage with and between a semiconductor substrate processing chamber and an accessory attachment which is exposed to the processing chamber, with the body having first and second faces. The body includes an external perimeter extending between the first and second faces. The body includes a volume in at least one cross sectional region transverse the passageway which extends to diametrically opposing portions of the perimeter. At least a majority of said cross sectional region constitutes a mass of substantially non-metallic and thermally insulative material. The mass of material is sufficient to effectively reduce heat transfer between the semiconductor processing chamber and the accessory attachment when so engaged than would otherwise occur in the absence of said mass of material when so engaged.

Problems solved by technology

Yet, some existing and future generation processes (for example chemical vapor deposition including atomic layer deposition) are resulting in elevated processor chamber body temperatures well in excess of 80uture generation processes (for example chemical vapor deposition including atomic layer deposition) are resulting in elevated processor chamber body temperatures well in excess of 80° C. This can result in adduct and other process residue accumulations within the processing chambers.

Further, and particularly with higher chamber body temperatures, cold spots may develop within the processing chamber, and particularly proximate the transfer chamber.

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