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Methods, complexes, and system for forming metal-containing films

a metal-containing film and complex technology, applied in the field of methods and complexes for forming metal-containing films, can solve the problems of insufficient filling of very small geometries, formation of keyhole-shaped voids, and ineffective filling of contacts or vias with sputtered aluminum

Inactive Publication Date: 2006-02-09
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The method enables the deposition of high-quality, conformal Group IIIA metal-containing films with improved electromigration resistance and reduced carbon contamination, effectively addressing the limitations of existing techniques by providing stable and efficient film formation in semiconductor structures.

Problems solved by technology

In some applications, aluminum films are deposited using sputtering techniques; however, sputtered aluminum is not effective at filling contacts or vias because of shoulders or overhangs that form at the contact openings.
These overhangs can lead to the formation of keyhole-shaped voids.
Various collimation techniques help reduce this problem, but typically not enough to enable complete filling of very small geometries (e.g., less than about 0.5 μm).
A serious problem with this material, however, is its pyrophoricity.
However, such precursor compounds are still pyrophoric, albeit to a lesser extent.

Method used

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  • Methods, complexes, and system for forming metal-containing films
  • Methods, complexes, and system for forming metal-containing films
  • Methods, complexes, and system for forming metal-containing films

Examples

Experimental program
Comparison scheme
Effect test

example 1

Preparation of AlH2(CH2CH2CH2NMe2)

[0050] AlCl3 (2.0 g, 15 mmol) is added to a dry flask under an inert atmosphere (e.g., argon). To this is added 30 mL of hexanes, and the resulting slurry is cooled to −40° C. A solution of ClMgCH2CH2CH2NMe2 (30 mL of 0.5 M in tetrahydrofuran) is added to the AlCl3 over 10 minutes. The resulting mixture is stirred for 18 hours. The solvent is then removed in vacuo, resulting in a white solid, which is dried in vacuo and then transferred into a sublimator. A white sublimate of AlCl2(CH2CH2CH2NMe2) is obtained at 100° C. and a pressure of 0.5 torr. This product (2.0 g, 10.9 mmol) is dissolved in 30 mL of tetraethyleneglycol dimethylether (i.e., tetraglyme) and added to a suspension of LiAlH4 (0.82 g, 21.8 mmol) in 20 mL of tetraglyme. After stirring for several hours, the product AlH2(CH2CH2CH2NMe2) is removed from the solvent by vacuum transfer into a liquid nitrogen-cooled receiver. The resulting colorless product is used for deposition of Al-conta...

example 2

Preparation of In(CH3)2(CH2CH2CH2NMe2)

[0051] This compound is prepared as described in Hostalek et al., Thin Solid Films, 174, 1 (1989).

example 3

Preparation of GaH(CH3)(CH2CH2CH2NMe2)

[0052] GaCl3 (2.0 g, 11.4 mmol) is added to a dry flask under an inert atmosphere (e.g., argon) and suspended in 25 mL of tetrahydrofuran. To this suspension is added 22.8 mL (11.4 mmol) of a 0.5 M solution of ClMgCH2CH2CH2NMe2 in tetrahydrofuran. The mixture is stirred for 18 hours. The resulting solution is cooled to −60° C. and then 3.8 mL (11.4 mmol) of a 3.0 M solution of MeMgBr in diethyl ether is slowly added. The mixture is allowed to warm to room temperature, and after 2 hours the solvent is removed in vacuo. The intermediate, GaCl(CH3)(CH2CH2CH2NMe2), is then taken up in 30 mL of tetraglyme and added dropwise to a suspension of LiAlH4 (0.43 g, 11.4 mmol) in 20 mL of tetraglyme. After several hours, the product GaH(CH3)(CH2CH2CH2NMe2) is removed from the solvent by vacuum transfer into a liquid nitrogen-cooled receiver. The resulting colorless product is used for deposition of Ga-containing films.

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Abstract

A method of forming a film on a substrate using Group IIIA metal complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Description

STATEMENT OF RELATED APPLICATIONS [0001] The present invention is a continuation of U.S. patent application Ser. No. 10 / 325,313, filed on Dec. 19, 2002 (pending), which is a continuation of U.S. patent application Ser. No. 09 / 616,169, filed on Jul. 14, 2000, issued as U.S. Pat. No. 6,548,683 on Apr. 15, 2003 (issued), which is a divisional of U.S. patent application Ser. No. 09 / 063,193, filed on Apr. 20, 1998, issued as U.S. Pat. No. 6,130,160 on Oct. 10, 2000 (issued), which is a Continuation-in-Part of U.S. patent application Ser. No. 08 / 725,064, filed on Oct. 2, 1996, issued as U.S. Pat. No. 5,924,012 on Jul. 13, 1999 (issued), all of which are incorporated herein by reference.FIELD OF THE INVENTION [0002] This invention relates to methods and complexes for forming metal-containing films, such as metal or metal alloy films, particularly during the manufacture of semiconductor structures. The complexes include a Group IIIA metal, and are particularly suitable for use in a chemical...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): C07F5/06H01L21/31H01L21/469C07F5/00C23C16/18C23C16/30H01L21/285H01L21/768
CPCC07F5/00C07F5/065C07F5/066H01L21/76877C23C16/301H01L21/28556C23C16/18
Inventor VAARTSTRA, BRIAN A.
Owner MICRON TECH INC