Semiconductor device

Abstract

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device in which a semiconductor element such as a memory element and / or a logic element, and a high frequency semiconductor element for handling high frequency signals are mounted on a common substrate. [0003] 2. Description of the Related Art [0004] In recent years and continuing, there is a growing demand for higher integration of semiconductor elements such as electronic components in an electronic apparatus such as a mobile phone to realize miniaturization and technical improvements in the electronic apparatus. [0005] In response to such a demand, a semiconductor device has been developed that accommodates plural semiconductor elements with differing functions (e.g., a memory element and / or a logic element such as a microprocessor) within a common container or package. Such a semiconductor device is referred to as a SiP (System in Package). [0006] Also, with respe...

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Benefits of technology

[0027] The present invention has been conceived in response to one or more of the problems of the related art, and its object is to provide a semiconductor device with increased packaging density that is capable of preventing transmission loss of a high frequency signal and realizing miniaturization and technical improvements in an electronic apparatus.

[0028] In one aspect of the present invention, a first semiconductor element and a second semiconductor element are mounted on a common support substrate so that the packaging density of the semiconductor device may be increased. Also, a high frequency electrode is provided on one side of the support substrate at a position corresponding to the position of a via hole, and an external connection electrode is provided on the other side of the support substrate at a position corresponding to the position of the via hole so that the length of a signal transmission path between the high frequency electrode and the external connection electrode may be reduced and transmission loss of a high frequency signal may be prevented.

Problems solved by technology

However, when more than one sealed (packaged) semiconductor devices are mounted on one common support substrate as is described above, the packaging density of the support substrate may decrease, this being an obstacle to miniaturization of the electronic apparatus.

Also, when plural semiconductor devices other than those corresponding to the high frequency semiconductor element are separately formed on a support substrate and attempts are made to achieve desired electric characteristics for each of the semiconductor devices, the support substrate design may be complicated and the manufacturing cost of the electronic apparatus may be raised.

Further, in the above described structure, the length of the wiring connecting the high frequency semiconductor device to another semiconductor device (e.g., wiring 59 of FIG. 1) may be quite long so that a large transmission loss may be generated upon transmitting a high frequency signal.

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