Semiconductor device

a technology of semiconductor devices and semiconductors, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of large transmission loss generated by transmitting a high-frequency signal, complex design of support substrates, and reduced packaging density of support substrates, etc., to prevent transmission loss of high-frequency signals, improve the efficiency of electronic devices, and increase packaging density

a technology of semiconductor devices and semiconductors, applied in semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of large transmission loss generated by transmitting a high-frequency signal, complex design of support substrates, and reduced packaging density of support substrates, etc., to prevent transmission loss of high-frequency signals, improve the efficiency of electronic devices, and increase packaging density

US20060186524A1Inactive Publication Date: 2006-08-24FUJITSU LTD
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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Experimental program
Comparison scheme
Effect test

first embodiment

[0054] First, referring to FIGS. 2-4, a semiconductor device 70 according to a first embodiment of the present invention is described.

[0055]FIG. 2 is a cross-sectional diagram showing a configuration of the semiconductor device 70 according to the first embodiment; and FIG. 3 is a cross-sectional diagram showing a state in which the semiconductor device 70 is mounted on a mounting substrate.

[0056]FIG. 4 is a bottom plan view of the semiconductor device 70 viewed from the direction indicated by arrow A of FIG. 2.

[0057] It is noted that in FIG. 2, a region B is shown that corresponds to a region of an upper insulating film 76 on which a semiconductor element 101 is mounted (referred to as ‘chip mounting region B’ hereinafter).

[0058] According to the present embodiment, the semiconductor device 70 includes a support substrate 71, external connection terminals 97 and 98, semiconductor elements 101 and 105 corresponding to a first semiconductor element, and a high frequency semicondu...

second embodiment

[0141] In the following, a semiconductor device 135 according to a second embodiment of the present invention is described with reference to FIG. 11. It is noted that the semiconductor device 135 according to the present embodiment is characterized by implementing a shield member covering the high frequency semiconductor element.

[0142] In FIG. 11, components of the semiconductor device 135 that are identical to those of the semiconductor device 70 of the first embodiment are assigned the same references.

[0143] As is shown in FIG. 11, the semiconductor device 135 includes a support substrate 71, external connection terminals 97, 98, semiconductor elements 101, 105, a high frequency semiconductor element 110, and a shield member 136 covering the high frequency semiconductor element 110.

[0144] The semiconductor elements 101, 105, and the shield member 136 covering the high frequency semiconductor element 110 are covered by molded resin 122 along with wires 103 and 108.

[0145] In thi...

third embodiment

[0148] In the following, a semiconductor device 140 according to a third embodiment of the present invention is described with reference to FIGS. 12 and 13.

[0149]FIG. 12 is a cross-sectional diagram showing a configuration of the semiconductor device 140 according to the present embodiment. FIG. 13 is an enlarged cross-sectional diagram showing a configuration of a high frequency semiconductor element 145 of the semiconductor device 140 of FIG. 12. It is noted that the semiconductor device 140 according to the present embodiment is characterized in that it includes a capacitor element that is mounted on a rewiring formation surface of the high frequency semiconductor element 145.

[0150] It is noted that in FIGS. 12 and 13, components that are identical to those of the semiconductor device according to the first and second embodiment are assigned the same references.

[0151] Referring to FIG. 12, the semiconductor device 140 according to the present embodiment includes a support subs...

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Abstract

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device in which a semiconductor element such as a memory element and / or a logic element, and a high frequency semiconductor element for handling high frequency signals are mounted on a common substrate. [0003] 2. Description of the Related Art [0004] In recent years and continuing, there is a growing demand for higher integration of semiconductor elements such as electronic components in an electronic apparatus such as a mobile phone to realize miniaturization and technical improvements in the electronic apparatus. [0005] In response to such a demand, a semiconductor device has been developed that accommodates plural semiconductor elements with differing functions (e.g., a memory element and / or a logic element such as a microprocessor) within a common container or package. Such a semiconductor device is referred to as a SiP (System in Package). [0006] Also, with respe...

Claims

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Application Information

Patent Timeline
24 Aug 2006
Publication
US20060186524A1
IPC
H01L23/48
CPC
H01L23/3128; H01L2224/16235; H01L23/5384; H01L23/552; H01L23/66; H01L25/18; H01L2224/16225; H01L2224/32145
Inventors
AIBA, YOSHITAKA; FUJISAWA, TETSUYA