Uniform critical dimension size pore for pcram application
a critical dimension and pore technology, applied in the field of computer memory, can solve the problem that the change material does not utilize chalcogen
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[0017]The present invention is described herein with reference to embodiments of the invention. Throughout the description of the invention reference is made to FIGS. 1-8. When referring to the figures, like structures and elements shown throughout are indicated with like reference numerals.
[0018]FIG. 1 illustrates the cross sectional view of an exemplary memory cell 102 contemplated by the present invention. The exemplary memory cell 102 is comprised of an insulating layer 104, a bottom electrode 106, an intermediate insulating layer 108, a pore 114 within the intermediate insulating layer that contains phase change material 110, and an upper electrode 112. The memory cell 102 is typically formed on a substrate with metal-oxide-semiconductor field-effect transistors (MOSFETs) (not shown). Other switching devices known to those skilled in the art, such as junction FETs and bipolar junction transistors, may be used with the present invention.
[0019]In FIG. 2 an exemplary embodiment of...
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