Surface repair structure and process for interconnect applications
a surface repair and interconnect technology, applied in the direction of semiconductor devices, semiconductor/solid-state device details, electrical apparatus, etc., can solve the problems of in-line defect related yield loss of invention interconnect structures, and achieve the effect of improving reliability, reducing in-line defect related yield loss, and improving reliability
Inactive Publication Date: 2010-04-08
GLOBALFOUNDRIES INC
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Benefits of technology
The present invention provides semiconductor interconnect structures with improved reliability. The structures have better resistance to defects and reduced yield loss. The interconnect structures include a surface repair material that fills any hollow-metal related defects in the conductive material. The surface repair material is a noble metal or noble metal alloy that is resistant to corrosion and oxidation. The interconnect structures also have a U-shaped diffusion barrier to prevent the diffusion of the conductive material into the dielectric material. The interconnect structures can be used in the semiconductor industry for better reliability and technology extendibility.
Problems solved by technology
As such, the inventive interconnect structures exhibit a decreased in in-line defect related yield loss.
Method used
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[0022]The present invention, which provides interconnect structures having enhanced electromigration (EM) resistance and a decrease of in-line defect related yield loss and a method of forming the same, will now be described in greater detail by referring to the following discussion and drawings that accompany the present application. It is noted that the drawings of the present application are provided for illustrative purposes only and, as such, the drawings are not drawn to scale.
[0023]In the following description, numerous specific details are set forth, such as particular structures, components, materials, dimensions, processing steps and techniques, in order to provide a thorough understanding of the present invention. However, it will be appreciated by one of ordinary skill in the art that the invention may be practiced without these specific details. In other instances, well-known structures or processing steps have not been described in detail in order to avoid obscuring th...
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Abstract
Semiconductor interconnect structures including a surface-repair material, e.g., a noble metal or noble metal alloy, that fills hollow-metal related defects located within a conductive material are provided. The filling of the hollow-metal related defects with the surface repair material improves the electromigration (EM) reliability of the structure as well as decreasing in-line defect related yield loss.
Description
FIELD OF THE INVENTION[0001]The present invention relates to semiconductor interconnect structures, and methods of fabricating the same. More particularly, the present invention relates to semiconductor interconnect structures having enhanced electromigration (EM) resistance in which a decrease in in-line defect related yield loss is observed.BACKGROUND OF THE INVENTION[0002]Generally, semiconductor devices include a plurality of circuits that form an integrated circuit (IC) fabricated on a semiconductor substrate. A complex network of signal paths will normally be routed to connect the circuit elements distributed on the surface of the substrate. Efficient routing of these signals across the device requires formation of multilevel or multilayered schemes, such as, for example, single or dual damascene wiring structures. The wiring structure typically includes copper, Cu, since Cu based interconnects provide higher speed signal transmission between large numbers of transistors on a ...
Claims
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IPC IPC(8): H01L23/52H01L21/4763
CPCH01L21/7684H01L23/53238H01L21/76877H01L21/76849H01L2924/0002Y02P80/30H01L2924/00
Inventor YANG, CHIH-CHAOMURRAY, CONAL E.
Owner GLOBALFOUNDRIES INC