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Composition and organic insulating film prepared using the same

a technology of organic insulating film and composition, which is applied in the field of composition and organic insulating film prepared using the same, can solve the problems of increasing operating voltage, consuming a relatively large amount of power, and inorganic oxide material may have no advantages in terms of process compared to using conventional silicon, so as to reduce hysteresis and increase transparency

Inactive Publication Date: 2011-08-25
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The patent text describes a composition that can be used to make an insulating film for organic thin film transistors (OTFTs). This composition can help alleviate a problem called hysteresis and increase transparency while maintaining the properties of the OTFT. The composition includes an organic polymer material, an organic silane material, an organic metal compound, and an organic solvent. The unreacted organic metal compound can be made stable by crosslinking or substituting with the organic polymer material. The method of preparing the insulating film involves applying the composition to a substrate and curing it. The resulting insulating film can be used in OTFTs to improve their performance.

Problems solved by technology

However, the inorganic oxide material may have no advantages in terms of process compared to using conventional silicon.
As such, when the polymer insulating film is thickly formed due to increased leakage current, an increased operating voltage may result.
Accordingly, upon the actual use of displays, the device may consume a relatively great amount of power, and may deteriorate, thus becoming unstable.
Where hysteresis occurs, a rapid switching speed may not be realized and a display afterimage may undesirably remain.

Method used

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  • Composition and organic insulating film prepared using the same
  • Composition and organic insulating film prepared using the same
  • Composition and organic insulating film prepared using the same

Examples

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example 1

[0056]A poly(oligothiophene-thiazole) derivative (MW: about 40000, degree of polymerization: about 20) was dissolved to about 1 wt % in chlorobenzene to thus prepare a composition for forming a semiconductor layer. Further, a composition for forming an organic insulating film was prepared by mixing components and a toluene solvent, as shown in Table 1 below, to prepare a mixture, which was then filtered (about 0.20 mm).

TABLE 1Titanium t-PolymethylmethacrylateTrimethoxysilylpropyl-Butoxide(PMMA) (M = 120K)ethylcarbamate(Ti(OBu)4)Toluene110.36

[0057]On a washed glass substrate, Al for a gate electrode was deposited to about 1000 Å through sputtering, after which the material for an organic insulating film was applied through spin coating and then thermally treated at about 200° C. for about 1 hour, thus preparing an organic insulating film about 20,000 Å thick. The composition for a semiconductor layer was applied to a thickness of about 50 nm about 100 nm thereon and then thermally tr...

example 2

[0058]An OTFT was manufactured in the same manner as in Example 1, with the exception that the composition was prepared using tris(3-trimethoxysilylpropyl)isocyanate as the organic silane material having an electron-donating group, as shown in Table 2 below.

TABLE 2Titanium t-PolymethylmethacrylateTris(3-trimethoxyButoxide(PMMA) (M = 120K)silylpropyl)isocyanate(Ti(OBu)4)Toluene110.36

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Abstract

Disclosed is a composition, an organic insulating film including the same, an organic thin film transistor including the organic insulating film, an electronic device including the organic thin film transistor and methods of fabricating the same. In the composition, an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group are included to thus realize a structure which may further stabilize an unreacted crosslinking material. Thereby, a hysteresis phenomenon may be decreased and transparency may be increased, thus making it possible to assure stability upon exposure to air. Accordingly, the lifetime of the organic thin film transistor may be lengthened.

Description

PRIORITY STATEMENT[0001]This application is a Divisional of U.S. application Ser. No. 11 / 806,744 filed Jun. 4, 2007, which claims priority from Korean Patent Application No. 2006-112347, filed on Nov. 14, 2006, in the Korean Intellectual Property Office (KIPO), the entire contents of each of which are herein incorporated by reference.BACKGROUND[0002]1. Field[0003]Example embodiments relate to a composition and an organic insulating film prepared using the same, an OTFT using the above insulating film, an electronic device using the OTFT and methods of fabricating the same. Other example embodiments relate to a composition, which includes an organic polymer material having a carboxyl group and an organic silane material having an electron-donating group in order to assure the stability upon exposure to air, and to an organic insulating film prepared using the same, an OTFT using the above insulating film, an electronic device using the OTFT and methods of fabricating the same.[0004]2...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): H01L51/10C08K5/5455C08K5/5465H10N10/856
CPCH01L51/052H10K10/471C08L83/06C08J5/22
Inventor HAHN, JUNG SEOKLEE, EUN KYUNGLEE, SANG YOONJEONG, EUN JEONGKIM, JOO YOUNG
Owner SAMSUNG ELECTRONICS CO LTD