Method Of Programming A Nonvolatile Memory Device

a nonvolatile memory and programming method technology, applied in the field of nonvolatile memory devices, can solve the problem of widening of threshold voltage distributions, and achieve the effect of narrowing the threshold voltage distribution and reducing the increase in the width of each threshold voltage distribution

Inactive Publication Date: 2012-07-05
SAMSUNG ELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0025]As described above, the method of programming the nonvolatile memory device according to example embodiments may

Problems solved by technology

However, certain aspects of newer flash memory devices, such as increasing integration density, may cause the thre

Method used

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  • Method Of Programming A Nonvolatile Memory Device
  • Method Of Programming A Nonvolatile Memory Device
  • Method Of Programming A Nonvolatile Memory Device

Examples

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Embodiment Construction

[0051]Detailed example embodiments are disclosed herein. However, specific structural and functional details disclosed herein are merely representative for purposes of describing example embodiments. Example embodiments may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.

[0052]Accordingly, while example embodiments are capable of various modifications and alternative forms, embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that there is no intent to limit example embodiments to the particular forms disclosed, but to the contrary, example embodiments are to cover all modifications, equivalents, and alternatives falling within the scope of example embodiments. Like numbers refer to like elements throughout the description of the figures.

[0053]It will be understood that, although the terms first, second, etc. may be used h...

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Abstract

In method of programming a nonvolatile memory device including a plurality of multi-level cells that store multi-bit data according to example embodiments, a least significant bit (LSB) program operation is performed to program LSBs of the multi-bit data in the plurality of multi-level cells. A most significant bit (MSB) program operation is performed to program MSBs of the multi-bit data in the plurality of multi-level cells. To perform the MSB program, an MSB pre-program operation is performed on first multi-level cells, from among the plurality of multi-level cells, that are to be programmed to a highest target program state among a plurality of target program states, and an MSB main program operation is performed to program the plurality of multi-level cells to the plurality of target program states corresponding to the multi-bit data.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]This U.S. non-provisional application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 2010-0138502 filed on Dec. 30, 2010 in the Korean Intellectual Property Office (KIPO), the entire contents of which are incorporated herein by reference.BACKGROUND[0002]1. Technical Field[0003]Example embodiments relate to nonvolatile memory devices. More particularly, example embodiments relate to methods of programming nonvolatile memory devices including multi-level cells.[0004]2. Description of the Related Art[0005]Memory cells of a nonvolatile memory device, such as a flash memory device, may be classified into single level cells (SLCs) that store one bit of data per memory cell and multi-level cells (MLCs) that store more than one bit of data per memory cell. The MLCs may store multiple bits of data by using multiple threshold voltage distributions to represent different states of multi-bit data. For example, two-bit MLCs may ...

Claims

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Application Information

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IPC IPC(8): G11C16/04G11C16/12
CPCG11C11/5628G11C16/10G11C16/3459G11C16/12G11C16/3418G11C16/34
Inventor JANG, JOON-SUCKWAK, DONG-HUN
Owner SAMSUNG ELECTRONICS CO LTD
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