Plasma processing apparatus and plasma processing method

a technology of plasma processing and processing apparatus, which is applied in the direction of water supply installation, transportation and packaging, service pipe system, etc., can solve the problems of severe requirements for plasma processing stability, and achieve the effect of conducting the control of temperature condition more accurately
US20120192953A1Inactive Publication Date: 2012-08-02SHIBAURA MECHATRONICS CORP
1 Cites 7 Cited by

Patent Information

Authority / Receiving Office
US · United States
Patent Type
Applications(United States)
Current Assignee / Owner
SHIBAURA MECHATRONICS CORP
Publication Date
2012-08-02
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

A plasma processing apparatus includes a processing vessel, a depressurizing part, a placing part, a discharge tube, an introduction waveguide, a gas-supplying part, a transport tube, and a first temperature-detecting part. The processing vessel is able to maintain an atmosphere. The depressurizing part reduces the internal pressure of the processing vessel. The placing part places an object to be processed. The discharge tube has a region generating plasma therein and being provided at a position separated from the processing vessel. The introduction waveguide causes microwave emitted from a microwave-generating part to propagate therethrough to introduce the microwave into the region generating the plasma. The gas-supplying part supplies a process gas to the region generating the plasma. The transport tube communicates the discharge tube with the processing vessel. The first temperature-detecting part detects temperature of the discharge tube.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The invention relates to a plasma processing apparatus and a processing method.BACKGROUND ART

[0002] Plasma-utilizing dry process has actively been used in wide technical fields including the manufacture of semiconductor devices, surface hardening of metal parts, surface activation of plastic parts, and chemical-free sterilization. The manufacture of semiconductor devices and liquid crystal displays, for example, adopts varieties of plasma processing such as ashing treatment, etching processing, thin-film deposition (film-forming) processing, and surface modification treatment. The plasma-utilizing dry process is advantageous in terms of low cost, high processing speed, and decreasing environmental pollution because of not using chemicals.

[0003] According to that type of plasma processing, the generated plasma excites and activates the process gas to produce plasma products such as neutral active species and ions. Neutral active species and ions thus generated perf...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More