Semiconductor device and method for manufacturing semiconductor device
a semiconductor and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical equipment, etc., can solve the problems of incompatible attempts with the advanced cmos process of the 90 nm generation or later, and the need for high temperature annealing
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first embodiment
[0035]FIGS. 1A to 1F are cross-sectional views of a semiconductor substrate and illustrate main processes of a method for manufacturing a semiconductor device according to a
[0036]With reference to FIG. 1A, a silicon substrate 1 is etched to form an isolation trench. Then, the isolation trench is filled with an oxide film or the like to form an isolated region STI by shallow trench isolation, thereby defining active regions. Various transistors are formed on a plurality of the active regions. A process for manufacturing an n-channel high breakdown-voltage transistor will be mainly described hereinafter. A p-type dopant, for example B, is ion-implanted into the active region for a high breakdown-voltage transistor with acceleration energy in the range from 100 keV to 200 keV in a dose amount in the range from 2×1013 (hereinafter described in a manner such as 2E13) to 5E13 (cm−2), thereby forming a p-type well PW. In the case of production of a discrete device, this process may be omit...
third embodiment
[0053]In a portable wireless device, various MOS transistors are required to be integrated on a single silicon chip. For example, a middle breakdown-voltage transistor used for input and output (I / O) of a voltage of about 3.5 V is integrated with a low breakdown-voltage transistor used for a logic circuit as well as a high breakdown-voltage transistor used for a power amplifier. FIGS. 4A to 4I are perspective views illustrating main processes of a method for manufacturing a semiconductor device according to a
[0054]With reference to FIG. 4A, the isolated region STI is formed on the substrate 1 by the shallow trench isolation, thereby defining active regions. The active region in a left side is a core transistor region, and the middle active region is an I / O transistor region, and the active region in a right side is a high breakdown-voltage transistor region. In this case, an example of formation of an n-channel transistor will be described. The p-type dopant, for example B, is ion-i...
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