Etching Gas

Inactive Publication Date: 2012-09-13
CENT GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Benefits of technology

[0016]In view of the above, an object of the present invention is to provide a novel etching gas which is not only excellent in

Problems solved by technology

However, it is considered difficult to fundamentally avoid a recombination of the CF3 active species and the fluorine active species so long as the etching gas partially having the structure of CF3 group is used.
In view of the above, the optimized etching condition is found not to be optimized in respect of the micro-pattern

Method used

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Examples

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Example

Examples 1 to 3 and Comparative Examples 1 and 2

[0053]There are shown examples where etching was conducted on an interlaminar insulating film (SiO2) by using an etching gas of the present invention for contact hole-fabrication.

[0054]As a sample, a SiO2 interlaminar insulating film 22 was formed on a single crystal silicon wafer 21. The sample was put to use upon forming on the SiO2 film a resist mask 23 having apertures to serve as an etching mask. A sample before etching is shown in FIG. 1A.

[0055]A schematic cross section of an apparatus used in the experiment is shown in FIG. 2. By using a high-frequency source 3 (13.56 MHz, 50 W), etching gases (difluoroacetyl fluoride (CHF2COF), oxygen (O2), argon (Ar)) having been supplied from a gas inlet at flow rates shown in Table 1 were excited in a sapphire tube 7 attached to the top of a reaction chamber 1 thereby generating active species. The active species were supplied into the chamber by the flow of gas, upon which etching was condu...

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Abstract

Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr and the like, from CH4, C2H2,C2H4,C2H6, C3H4, C3H6, C3H5, HI, HBr, HCl, CO, NO, NH3, H2 and the like, or from CH4, CH3F, CH2F2 and CHF3. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF4 that places a burden on the environment.

Description

TECHNICAL FIELD[0001]The present invention relates to an etching gas used for producing thin film devices represented by IC, LSI, TFT and the like, and particularly to an etching gas that accomplishes both environmental performances and micro-patterning performances.BACKGROUND OF THE INVENTION[0002]In processes for producing semiconductor thin film devices, optical devices, super steel materials and the like, there have been produced various thin films, thick films and the like by means of CVD method, sputtering method, sol-gel method, vapor deposition method and the like. Moreover, in order to form a circuit pattern, gas etching for partially removing a thin film material has been conducted on semiconductors or in fabrication of semiconductors for IC, LSI, TFT and the like.[0003]Hitherto, perfluorocarbons (PFCs) such as CF4, C2F6, C3F8 and the like have been used as an etching gas in etching for forming circuits, in fabrication of thin film devices. However, these gases exist in th...

Claims

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Application Information

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IPC IPC(8): C09K13/00C09K13/06C07C49/88H01L21/306
CPCH01L21/3065C07C53/48C23F1/12C09K13/00H01L21/31116C07C19/08H01L21/0274
Inventor TAKADA, NAOTOMORI, ISAMU
Owner CENT GLASS CO LTD
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