Etching Gas
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Benefits of technology
Problems solved by technology
Method used
Image
Examples
Example
Examples 1 to 3 and Comparative Examples 1 and 2
[0053]There are shown examples where etching was conducted on an interlaminar insulating film (SiO2) by using an etching gas of the present invention for contact hole-fabrication.
[0054]As a sample, a SiO2 interlaminar insulating film 22 was formed on a single crystal silicon wafer 21. The sample was put to use upon forming on the SiO2 film a resist mask 23 having apertures to serve as an etching mask. A sample before etching is shown in FIG. 1A.
[0055]A schematic cross section of an apparatus used in the experiment is shown in FIG. 2. By using a high-frequency source 3 (13.56 MHz, 50 W), etching gases (difluoroacetyl fluoride (CHF2COF), oxygen (O2), argon (Ar)) having been supplied from a gas inlet at flow rates shown in Table 1 were excited in a sapphire tube 7 attached to the top of a reaction chamber 1 thereby generating active species. The active species were supplied into the chamber by the flow of gas, upon which etching was condu...
PUM
Property | Measurement | Unit |
---|---|---|
Fraction | aaaaa | aaaaa |
Fraction | aaaaa | aaaaa |
Time | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2023 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap