Etching Gas

Inactive Publication Date: 2012-09-13
CENT GLASS CO LTD
5 Cites 10 Cited by

AI-Extracted Technical Summary

Problems solved by technology

However, it is considered difficult to fundamentally avoid a recombination of the CF3 active species and the fluorine active species so long as the etching gas partially having the structure of CF3 group is used.
In view of the above, the optimized etching condition is found not to be optimized in respect of the micro-pattern...
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Benefits of technology

[0016]In view of the above, an object of the present invention is to provide a novel etching gas which is not only excellent in ...
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Abstract

Disclosed is an etching gas provided containing CHF2COF. The etching gas may contain, as an additive, at least one kind of gas selected from O2, O3, CO, CO2, F2, NF3, Cl2, Br2, I2, XFn (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH4, CH3F, CH2F2, CHF3, N2, He, Ar, Ne, Kr and the like, from CH4, C2H2,C2H4,C2H6, C3H4, C3H6, C3H5, HI, HBr, HCl, CO, NO, NH3, H2 and the like, or from CH4, CH3F, CH2F2 and CHF3. This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF4 that places a burden on the environment.

Application Domain

Technology Topic

Image

  • Etching Gas
  • Etching Gas

Examples

  • Experimental program(1)

Example

Examples 1 to 3 and Comparative Examples 1 and 2
[0053]There are shown examples where etching was conducted on an interlaminar insulating film (SiO2) by using an etching gas of the present invention for contact hole-fabrication.
[0054]As a sample, a SiO2 interlaminar insulating film 22 was formed on a single crystal silicon wafer 21. The sample was put to use upon forming on the SiO2 film a resist mask 23 having apertures to serve as an etching mask. A sample before etching is shown in FIG. 1A.
[0055]A schematic cross section of an apparatus used in the experiment is shown in FIG. 2. By using a high-frequency source 3 (13.56 MHz, 50 W), etching gases (difluoroacetyl fluoride (CHF2COF), oxygen (O2), argon (Ar)) having been supplied from a gas inlet at flow rates shown in Table 1 were excited in a sapphire tube 7 attached to the top of a reaction chamber 1 thereby generating active species. The active species were supplied into the chamber by the flow of gas, upon which etching was conducted on a sample 12 fixed by a sample holder 11. Among the gas specimens, CHF2COF, CF3COF and CF4 were introduced from a first gas inlet while O2 was introduced from a second gas inlet, through a mass flow controller (though not shown).
[0056]The temperature of the substrate (or the sample holder 11) was set at 25° C., the pressure was set at 2.67 Pa (0.02 Torr), and the RF power density was set at 2.2 W/cm2. A discharged gas was diluted with nitrogen supplied at 5 L/min on a discharge side of a mechanical booster pump, and then the concentration of CF4 was quantified by calibration curve method with the use of FT-IR. Results of the above are shown in Table 1. Incidentally, “ND” shown in the Table refers to less than the floor limit for detection (0.05 volume %). The etching rate (Å/min) was determined in such a manner as to divide film thicknesses obtained before and after etching by an etching time. The film thicknesses were measured by an optical interferotype film-thickness meter. A sample after etching (in the case of having facets) is shown in FIG. 1B.
TABLE 1 Flow Flow CH4 Rate Rate Etching Selection Concentration of Gas 1 of Gas 2 Rate Ratio to Aspect Patterning in Discharged Gas 1 SCCM Gas 2 SCCM Å/min Resist Ratio Profile Gas Example 1 CHF2COF 50 None — 4058 6 6 or No facet, Less than more Good side floor limit for wall detection Example 2 CHF2COF 10 Ar 200 4121 6 6 or No facet, Less than more Good side floor limit for wall detection Example 3 CHF2COF 50 O2 10 15598 7 6 or No facet, Less than more Good side floor limit for wall detection Comparative CF3COF 50 None — 3218 5 6 or Partially 0.11% Example 1 more having facets and gouges in side wall Comparative CF4 50 None — 608 4 5 Partially 0.18% Example 2 having facets and gouges in side wall CHF2COF: Difluoroacetyl fluoride CF3COF: Trifluoroacetyl fluoride O2: Oxygen Ar: Argon CF4: Carbon tetrafluoride
EXPLANATION OF REFERENCE NUMERALS
[0057]1 Chamber
[0058]2 Earth
[0059]3 High-frequency source
[0060]4 First gas inlet
[0061]5 Second gas inlet
[0062]6 Third gas inlet
[0063]7 Sapphire tube
[0064]8 Induction coil
[0065]9 Electronic pressure meter
[0066]10 Discharged-gas line
[0067]11 Sample holder
[0068]12 Sample
[0069]21 Silicon wafer
[0070]22 SiO2 interlaminar insulating film
[0071]23 Resist mask
[0072]24 Facets
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PUM

PropertyMeasurementUnit
Fraction0.0011fraction
Fraction0.0018fraction
Time243480.0s
tensileMPa
Particle sizePa
strength10

Description & Claims & Application Information

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